米6体育平台手机版

SLOU186G August 2006 – May 2017 TRF7960 , TRF7961

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

RHB|32
- MPQF130D

散热焊盘机械数据 (封装 | 引脚)

RHB|32
- QFND029X

订购信息

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_IN	Supply voltage			6	V
I_O	Output current			150	mA
T_J	Maximum junction temperature	Any condition		140	°C
T_J	Maximum junction temperature	Continuous operation, long-term reliability⁽²⁾		125	°C
T_stg	Storage temperature range		–55	150	°C
	Lead temperature	1,6 mm (1/16 inch) from case for 10 seconds		300	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability or lifetime of the device.

5.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	TYP	MAX	UNIT
V_IN	Supply voltage	2.7	5	5.5	V
T_J	Operating virtual junction temperature	–40		125	°C
T_A	Operating ambient temperature	–40	25	110	°C

5.4 Electrical Characteristics

TYP values at 25°C, MIN and MAX values over operating ambient temperature range, V_S = 5 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
I_PD	Supply current in power-down mode	All systems disabled, including supply voltage regulators		1	10	µA
I_PD2	Supply current in power-down mode 2	The reference voltage generator and VDD_X remain active to support external circuitry.		120	300	µA
I_STBY	Supply current in standby mode	Oscillator running, supply voltage regulators in low-consumption mode		1.5	4	mA
I_ON1	Supply current without antenna driver current	Oscillator, regulators, RX, and AGC are active, TX is off		10	16	mA
I_ON2	Supply current with antenna driver current	Oscillator, regulators, RX, AGC, and TX are active, P_out = 100 mW		70		mA
I_ON3	Supply current with antenna driver current	Oscillator, regulators, RX, AGC, and TX are all active, P_out = 200 mW		120		mA
BG	Band-gap voltage	Internal analog reference voltage	1.4	1.6	1.7	V
V_POR	Power-on-reset (POR) voltage		1.4	2	2.5	V
V_{DD_A}	Regulated supply for analog circuitry		3.1	3.5	3.8	V
V_{DD_RF}	Regulated supply for RF circuitry	Regulator set for 5-V system with 250-mV difference	4	4.6	5.2	V
V_{DD_X}	Regulated supply for external circuitry		3.1	3.4	3.8	V
P_PSRR	Rejection of external supply noise on the supply VDD_RF regulator	The difference between the external supply and the regulated voltage is higher than 250 mV, measured at 212 kHz	20	26		dB
R_RFOUT	PA driver output resistance	Half-power mode		8	12	Ω
R_RFOUT	PA driver output resistance	Full-power mode		4	6	Ω
R_RFIN	RX_IN1 and RX_IN2 input resistance		5	10	20	kΩ
V_RFIN	Maximum input voltage	At RX_IN1 and RX_IN2 inputs		3.5		V_PP
V_SENS	Input sensitivity	f_SUBCARRIER = 424 kHz		1.2	2.5	mV_PP
V_SENS	Input sensitivity	f_SUBCARRIER = 848 kHz		1.2	3	mV_PP
t_{SET_PD}	Setup time after power down			10	20	ms
t_{SET_STBY}	Setup time after standby mode			30	100	µs
t_REC	Recovery time after modulation (ISO/IEC 14443)	Modulation signal: sine, 424 kHz, 10 mVpp			60	µs
f_{SYS_CLK}	SYS_CLK frequency	In PD2 mode EN = 0 and EN2 = 1	30	60	120	kHz
f_{D_CLKmax}	Maximum DATA_CLK frequency	Depends on capacitive load on the I/O lines, TI recommends 2 MHz⁽¹⁾	2	4	8	MHz
CLK_MAX	Maximum CLK frequency			2		MHz
V_IL	Input logic low			0.2 × V_{DD_I/O}	0.2 × V_{DD_I/O}	V
V_IH	Input logic high		0.8 × V_{DD_I/O}			V
R_OUT	Output resistance of I/O_0 to I/O_7	low_io = H for V_{DD_I/O} < 2.7 V		400	800	Ω
R_{SYS_CLK}	Output resistance of SYS_CLK	low_io = H for V_{DD_I/O} < 2.7 V		200	400	Ω

(1) Recommended DATA_CLK speed is 2 MHz; higher data clock depends on the capacitive load. Maximum SPI clock speed should not exceed 10 MHz. This clock speed is acceptable only when external capacitive load is less than 30 pF. The MISO driver has a typical output resistance of 400 Ω (12-ns time constant when 30-pF load is used).

5.5 Thermal Resistance Characteristics

PACKAGE	Rθ_JC (°C/W)	Rθ_JA ⁽¹⁾ (°C/W)	POWER RATING⁽²⁾
PACKAGE	Rθ_JC (°C/W)	Rθ_JA ⁽¹⁾ (°C/W)	T_A ≤ 25°C	T_A = 85°C
RHB (32)	31	36.4	2.7 W	1.1 W

(1) This data was taken using the JEDEC standard high-K test PCB.

(2) Power rating is determined with a junction temperature of 125°C. This is the temperature at which distortion starts to increase substantially. Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and long-term reliability.