ZHCSMX2B June   2007  – July 2021 TRS3221E

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  ESD Ratings, IEC Specifications
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Driver Section Electrical Characteristics
    8. 6.8  Driver Section Switching Characteristics
    9. 6.9  Receiver Section Electrical Characteristics
    10. 6.10 Receiver Section Switching Characteristics
    11. 6.11 Auto-Powerdown Section Electrical Characteristics
    12. 6.12 Auto-Powerdown Section Switching Characteristics
    13. 6.13 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power
      2. 8.3.2 RS232 Driver
      3. 8.3.3 RS232 Receiver
      4. 8.3.4 RS232 Status
    4. 8.4 Device Functional Modes
  9. Application Information Disclaimer
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Design Requirements
    4. 9.4 Detailed Design Procedure
    5. 9.5 Application Curve
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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Driver Section Switching Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 9-1)
PARAMETERTEST CONDITIONS(3)MINTYP(1)MAXUNIT
Maximum data rateCL = 1000 pF,RL = 3 kΩ, See Figure 7-1RGT package250500kbit/s
DB or PW package

150

250

tsk(p)Pulse skew(2)CL = 1000 pF,RL = 3 kΩ Figure 7-2

RGT package

50ns
CL = 150 pF to 2500 pF,RL = 3 kΩ to 7 kΩ, See Figure 7-2

DB or PW package

100

SR(tr)Slew rate,
transition region
(see Figure 7-1)
VCC = 3.3 V,
RL = 3 kΩ to 7 kΩ
CL = 150 pF to 1000 pF630V/μs
CL = 150 pF to 2500 pF430
All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
Pulse skew is defined as |tPLH  – tPHL| of each channel of the same device.
Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.