米6体育平台手机版

ZHCSJI4F July 2006 – March 2015 TS3A4751

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

RUC|14
- MPQF212D
PW|14
- MPDS360
RGY|14
- MPQF114G

散热焊盘机械数据 (封装 | 引脚)

RUC|14
- QFND283A
RGY|14
- QFND039P

订购信息

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage referenced to GND⁽²⁾		–0.3	4	V
V_NO V_COM V_IN	Analog and digital voltage		–0.3	V_CC + 0.3	V
I_NO I_COM	On-state switch current	V_NO, V_COM = 0 to V_CC	–100	100	mA
I_CC I_GND	Continuous current through V_CC or GND			±100	mA
V	Peak current pulsed at 1 ms, 10% duty cycle	COM, V_I/O		±200	mA
T_A	Operating temperature		–40	85	°C
T_J	Junction temperature			150	°C
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Signals on COM or NO exceeding V_CC or GND are clamped by internal diodes. Limit forward diode current to maximum current rating.