SCES707C August   2008  – December 2016 TS5A12301E

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics - 5-V Supply
    6. 6.6 Electrical Characteristics - 3.3-V Supply
    7. 6.7 Electrical Characteristics - 2.5-V Supply
    8. 6.8 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Isolation
      2. 8.3.2 1.8-V Compatible Logic
      3. 8.3.3 Integrated Control Input Pulldown
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VCC Supply voltage(3) –0.5 6.5 V
VNC,
VNO,
VCOM
Analog voltage(3)(4) –0.5 VCC + 0.5 V
IIK Analog port diode current VCC < VNC, VNO, VCOM, or
VNC, VNO, VCOM < 0
–50 50 mA
VIN Digital input voltage(3)(5) –0.5 6.5 V
IIK Digital input clamp current VI < 0 –50 mA
ICC,
IGND
Continuous current through VCC or GND –100 100 mA
Tstg Storage temperature –65 150 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)
All voltages are with respect to ground (unless otherwise specified).
This value is limited to 5.5 V maximum.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±8000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±8000
Contact discharge (IEC 61000-4-2) 8000
Air-gap discharge (IEC 61000-4-2) 15000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 2.25 5.5 V
VNC,
VNO,
VCOM
Analog voltage 0 VCC V
VIN Digital input voltage 0 5.5 V
INC,
INO,
ICOM
On-state switch current VNC, VNO, VCOM = 0 to VCC –450 450 mA
On-state peak switch current(1) VNC, VNO, VCOM = 0 to VCC –700 700
TA Operating temperature –40 85 °C
Pulse at 1-ms duration < 10% duty cycle

Thermal Information

THERMAL METRIC(1) TS5A12301E UNIT
YFP (DSBGA)
6 PINS
RθJA Junction-to-ambient thermal resistance(2) 123.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 1.9 °C/W
RθJB Junction-to-board thermal resistance 37.6 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 37.7 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
The package thermal impedance is calculated in accordance with JESD 51-7.

Electrical Characteristics – 5-V Supply

VCC = 4.5 V to 5.5 V and TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
ron ON-state resistance VNO or VNC = 2.5 V, ICOM = –100 mA, and VCC = 4.5 V (see Figure 12) TA = 25°C 0.5 0.75 Ω
TA = –40°C to 85°C 0.8
Δron ON-state resistance match between channels VNO or VNC = 2.5 V, ICOM = –100 mA, and VCC = 4.5 V (see Figure 12) TA = 25°C 0.05 0.1 Ω
TA = –40°C to 85°C 0.1
ron(flat) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ VCC, ICOM = –100 mA, VCC = 4.5 V,
and TA = 25°C (see Figure 12)
0.15 Ω
VNO or VNC = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA, and VCC = 4.5 V
(see Figure 12)
TA = 25°C 0.1 0.2
TA = –40°C to 85°C 0.25
INO(OFF),
INC (OFF)
NO and NC OFF leakage current VNO = 1 V, 4.5 V, VCOM = 4.5 V, 1 V,
VNC = open, or VNO = 1 V, 4.5 V,
VCOM = 4.5 V, 1 V, VNO = open, and
VCC = 5.5 V (see Figure 13)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –100 100
INO(PWROFF),
INC (PWROFF)
NO and NC PWROFF leakage current VNO or VNC = 0 V to 5.5 V, VCOM = 5.5 V to 0 V, and VCC = 0 V (see Figure 13) TA = 25°C –10 10 µA
TA = –40°C to 85°C –10 10
INO(ON) NC and NO ON leakage current VNO = 1 V, 4.5 V, VCOM, VNC = open, or VNC = 1 V, 4.5 V, VCOM, VNO = open,
and VCC = 5.5 V (see Figure 14)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –200 200
ICOM(ON) COM ON leakage current VCOM = 1 V, 4.5 V, VNO and VNC = open, or VCOM = 1 V, 4.5 V, VNO or
VNC = open, and VCC = 5.5 V (see Figure 14)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –200 200
ICOM(PWROFF) COM OFF leakage current VNO or VNC = 0 V to 5.5 V, VCOM = 5.5 V to 0 V, and VCC = 0 V (see Figure 13) TA = 25°C –10 10 µA
TA = –40°C to 85°C –10 10
DIGITAL CONTROL INPUT (IN)
VIH Input logic high VCC = 5.5 V and TA = –40°C to 85°C 1.05 5.5 V
VIL Input logic low VCC = 5.5 V and TA = –40°C to 85°C 0 0.65 V
IIH,
IIL
Input leakage current VIN = 1.95 V or 0 V, VCC = 5.5 V, and TA = –40°C to 85°C –0.05 0.5 µA
rIN Input resistance VIN = 1.95 V, VCC = 5.5 V, and TA = –40°C to 85°C 6
DYNAMIC
tON Turnon time VCOM = VCC, RL = 50 Ω, CL= 35 pF
(see Figure 16)
VCC = 5 V and
TA = 25°C
110 225 ns
VCC = 4.5 V and
TA = –40°C to 85°C
250
tOFF Turnoff time VCOM = VCC, RL = 50 Ω, CL = 35 pF
(see Figure 16)
VCC = 5 V and
TA = 25°C
100 215 ns
VCC = 4.5 V and
TA = –40°C to 85°C
225
tBBM Break-before-make time VCOM = VCC, RL = 50 Ω, CL = 35 pF
(see Figure 17)
VCC = 5 V and
TA = 25°C
1 10 15 ns
VCC = 4.5 V and
TA = –40°C to 85°C
1 20
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, VCC = 5 V, and TA = 25°C
(see Figure 21)
97 pC
CNO(OFF) NO OFF capacitance VNC or VNO = VCC or GND, switch OFF, VCC = 5 V,
and TA = 25°C (see Figure 15)
28 pF
CNC(ON),
CNO(ON)
NC and NO ON capacitance VNC or VNO = VCC or GND, switch ON, VCC = 5 V,
and TA = 25°C (see Figure 15)
112 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, switch ON, VCC = 5 V, and TA = 25°C (see Figure 15) 112 pF
CI Digital input capacitance VIN = VCC or GND, and TA = 25°C (see Figure 15) 3 pF
BW Bandwidth RL = 50 Ω, switch ON, VCC = 5 V, and TA = 25°C
(see Figure 18)
55 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, VCC = 5 V, and TA = 25°C
(see Figure 19)
–63 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, VCC = 5 V, and TA = 25°C
(see Figure 20)
–63 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, VCC = 5 V,
and TA = 25°C (see Figure 22)
0.003%
SUPPLY
ICC Positive supply current VIN = VCC or GND, VCC = 5.5 V, and TA = –40°C to 85°C 10 µA
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)

Electrical Characteristics – 3.3-V Supply

VCC = 3 V to 3.6 V and TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
ron ON-state resistance VNO or VNC = 2 V, ICOM = –100 mA, switch ON, and VCC = 3 V (see Figure 12) TA = 25°C 0.75 0.9 Ω
TA = –40°C to 85°C 1.2
Δron ON-state resistance match between channels VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA, switch ON, and
VCC = 3 V (see Figure 12)
TA = 25°C 0.1 0.15 Ω
TA = –40°C to 85°C 0.15
ron(flat) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ VCC, ICOM = –100 mA, switch ON,
VCC = 3 V, and TA = 25°C (see Figure 12)
0.2 Ω
VNO or VNC = 0.8 V, 2 V,
ICOM = –100 mA, switch ON, and
VCC = 3 V (see Figure 12)
TA = 25°C 0.1 0.2
TA = –40°C to 85°C 0.3
INO(OFF),
INC (OFF)
NO and NC OFF leakage current VNO = 1 V, 3 V, VCOM = 3 V, 1 V,
VNC = open, or VNC = 1 V, 3 V,
VCOM = 3 V, 1 V, VNO = open, switch OFF, and VCC = 3.6 V (see Figure 13)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –50 50
INO(PWROFF),
INC (PWROFF)
NO and NC PWROFF leakage current VNO or VNC = 0 V to 3.6 V, VCOM = 3.6 V to 0 V, switch OFF, and VCC = 0 V
(see Figure 13)
TA = 25°C –10 10 µA
TA = –40°C to 85°C –10 10
INO(ON) NC and NO ON leakage current VNO = 1 V, 3 V, VNC and VCOM = open, or VNC = 1 V, 3 V, VNO and
VCOM = open, switch ON, and
VCC = 3.6 V (see Figure 14)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –100 100
ICOM(ON) COM ON leakage current VCOM = 1 V, VNO and VNC = open, or VCOM = 3 V, VNO and VNC = open, and VCC = 3.6 V (see Figure 14) TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –100 100
ICOM(PWROFF) COM OFF leakage current VNO or VNC = 0 V to 3.6 V, VCOM = 3.6 V to 0 V, and VCC = 0 V (see Figure 13) TA = 25°C –10 10 µA
TA = –40°C to 85°C –10 10
DIGITAL CONTROL INPUT (IN)
VIH Input logic high VCC = 3.6 V and TA = –40°C to 85°C 1.05 5.5 V
VIL Input logic low VCC = 3.6 V and TA = –40°C to 85°C 0 0.65 V
IIH,
IIL
Input leakage current VI = 1.95 V or 0 V, VCC = 3.6 V, and TA = –40°C to 85°C –0.05 0.5 µA
rIN Input resistance VI = 1.95 V, VCC = 3.6 V, and TA = –40°C to 85°C 6
DYNAMIC
tON Turnon time VCOM = VCC, RL = 50 Ω, CL= 35 pF
(see Figure 16)
VCC = 3.3 V and
TA = 25°C
72 175 ns
VCC = 3 V and
TA = –40°C to 85°C
185
tOFF Turnoff time VCOM = VCC, RL = 50 Ω, CL = 35 pF
(see Figure 16)
VCC = 3.3 V and
TA = 25°C
105 165 ns
VCC = 3 V and
TA = –40°C to 85°C
170
tBBM Break-before-make time VCOM = VCC, RL = 50 Ω, CL = 35 pF,
(see Figure 17)
VCC = 3.3 V and
TA = 25°C
1 16 30 ns
VCC = 3 V and
TA = –40°C to 85°C
1 35
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF
(see Figure 21)
VCC = 3.3 V and
TA = 25°C
97 pC
CNO(OFF) NO OFF capacitance VNO = VCC or GND, switch OFF, VCC = 3.3 V, and TA = 25°C (see Figure 15) 28 pF
CNC(ON),
CNO(ON)
NC and NO ON capacitance VNC or VNO = VCC or GND, switch ON, VCC = 3.3 V,
and TA = 25°C (see Figure 15)
115 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, switch ON, VCC = 3.3 V, and TA = 25°C (see Figure 15) 115 pF
CI Digital input capacitance VIN = VCC or GND, VCC = 3.3 V, and TA = 25°C
(see Figure 15)
3 pF
BW Bandwidth RL = 50 Ω, switch ON, VCC = 3.3 V, and TA = 25°C
(see Figure 18)
54 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, VCC = 3.3 V, and TA = 25°C
(see Figure 19)
–63 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, VCC = 3.3 V, and TA = 25°C
(see Figure 20)
–63 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, VCC = 3.3 V, and TA = 25°C (see Figure 22) 0.004%
SUPPLY
ICC Positive supply current VIN = 1.95 V or GND, VCC = 3.6 V, and TA = 25°C 10 µA
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)

Electrical Characteristics – 2.5-V Supply

VCC = 2.25 V to 2.75 V and TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
ron ON-state resistance VNO or VNC = 1.8 V, ICOM = –100 mA, switch ON, and VCC = 2.25 V
(see Figure 12)
TA = 25°C 1.1 1.3 Ω
TA = –40°C to 85°C 1.6
Δron ON-state resistance match between channels VNO or VNC = 1.8 V, 0.8 V,
ICOM = –100 mA, switch ON, and
VCC = 2.25 V (see Figure 12)
TA = 25°C 0.15 0.2 Ω
TA = –40°C to 85°C 0.2
ron(flat) ON-state resistance flatness 0 ≤ (VNO or VNC) ≤ VCC, ICOM = –100 mA, switch ON,
VCC = 2.25 V, and TA = 25°C (see Figure 12)
0.4 Ω
VNO or VNC = 0.8 V, 1 V, 1.8 V,
ICOM = –100 mA, switch ON, and
VCC = 2.25 V (see Figure 12)
TA = 25°C 0.25 0.5
TA = –40°C to 85°C 0.6
INO(OFF),
INC (OFF)
NO and NC OFF leakage current VNO = 0.5 V, 2.2 V, VCOM = 2.2 V, 0.5 V, VNC = open, or VNC = 0.5 V, 2.2 V,
VCOM = 2.2 V, 0.5 V, VNO = open, switch OFF, and VCC = 2.75 V (see Figure 13)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –50 50
INO(PWROFF),
INC (PWROFF)
NO and NC PWROFF leakage current VNO or VNC = 0 V to 2.75 V, VCOM = 2.75 V to 0 V, switch OFF, and VCC = 0 V
(see Figure 13)
TA = 25°C –10 10 µA
TA = –40°C to 85°C –10 10
INO(ON) NC and NO ON leakage current VNO = 0.5 V, 2.2 V, VNC and
VCOM = open, or VNC = 2.2 V, 0.5 V, VNO and VCOM = open, switch ON, and
VCC = 2.75 V (see Figure 14)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –100 100
ICOM(ON) COM ON leakage current VCOM = 0.5 V, VNO and VNC = open, or VCOM = 2.2 V, VNO and
VNC = open, switch ON, and
VCC = 2.75 V (see Figure 14)
TA = 25°C –20 2 20 nA
TA = –40°C to 85°C –100 100
ICOM(PWROFF) COM OFF leakage current VNO or VNC = 0 V to 2.75 V, VCOM = 2.75 V to 0 V, and VCC = 0 V (see Figure 13) TA = 25°C –10 10 µA
TA = –40°C to 85°C –10 10
DIGITAL CONTROL INPUT (IN)
VIH Input logic high VCC = 2.75 V and TA = –40°C to 85°C 1.05 5.5 V
VIL Input logic low VCC = 2.75 V and TA = –40°C to 85°C 0 0.65 V
IIH,
IIL
Input leakage current VIN = 1.95 V or 0, VCC = 2.75 V, and TA = –40°C to 85°C –0.05 0.5 µA
rIN Input resistance VIN = 1.95 V, VCC = 2.75 V, and TA = –40°C to 85°C 6
DYNAMIC
tON Turnon time VCOM = VCC, RL = 50 Ω, and CL= 35 pF (see Figure 16) VCC = 2.5 V and
TA = 25°C
97 170 ns
VCC = 2.25 V and
TA = –40°C to 85°C
175
tOFF Turnoff time VCOM = VCC, RL = 50 Ω, and CL = 35 pF (see Figure 16) VCC = 2.5 V and
TA = 25°C
80 155 ns
VCC = 2.25 V and
TA = –40°C to 85°C
160
tBBM Break-before-make time VCOM = VCC , RL = 50 Ω, and CL = 35 pF (see Figure 17) VCC = 2.5 V and
TA = 25°C
5 18 35 ns
VCC = 2.25 V and
TA = –40°C to 85°C
5 40
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, VCC = 2.5 V, and TA = 25°C (see Figure 21) 82 pC
CNO(OFF) NO OFF capacitance VNO = VCC or GND, switch OFF, VCC = 2.5 V, and TA = 25°C (see Figure 15) 29 pF
CNC(ON),
CNO(ON)
NC and NO ON capacitance VNC or VNO = VCC or GND, switch ON, VCC = 2.5 V,
and TA = 25°C (see Figure 15)
116 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, switch ON, VCC = 2.5 V, and TA = 25°C (see Figure 15) 116 pF
CI Digital input capacitance VIN = VCC or GND, VCC = 2.5 V, and TA = 25°C
(see Figure 15)
3 pF
BW Bandwidth RL = 50 Ω, switch ON, VCC = 2.5 V, and TA = 25°C
(see Figure 18)
54 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, VCC = 2.5 V, and TA = 25°C
(see Figure 19)
–63 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, VCC = 2.5 V, and TA = 25°C
(see Figure 20)
–63 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, VCC = 2.5 V, f = 20 Hz to 20 kHz, and TA = 25°C (see Figure 22) 0.008%
SUPPLY
ICC Positive supply current VIN = 1.95 V or GND, VCC = 2.75 V, and TA = –40°C to 85°C 10 µA
The algebraic convention (whereby the most negative value is a minimum and the most positive value is a maximum)

Typical Characteristics

TS5A12301E typ01_ces707.gif
(VCC = 2.25 V)
Figure 1. ron vs VCOM
TS5A12301E typ03_ces707.gif
(VCC = 4.5 V)
Figure 3. ron vs VCOM
TS5A12301E typ07_ces707.gif Figure 5. tON/tOFF vs Supply Voltage
TS5A12301E typ09_ces707.gif Figure 7. Charge Injection (QC) vs VCOM
TS5A12301E typ11_ces707.gif Figure 9. OFF Isolation vs Frequency
TS5A12301E typ13_ces707.gif Figure 11. Total Harmonic Distortion (THD) vs Frequency
TS5A12301E typ02_ces707.gif
(VCC = 3 V)
Figure 2. ron vs VCOM
TS5A12301E typ05_ces699.gif
(TA = 25°C)
Figure 4. ICC vs VCC
TS5A12301E typ08_ces707.gif Figure 6. tON/tOFF vs Temperature
TS5A12301E typ10_ces707.gif Figure 8. Gain vs Frequency
TS5A12301E typ12_ces707.gif Figure 10. Crosstalk vs Frequency