SCDS261H March   2008  – June 2017 TS5A22364

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 2.5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 5-V Supply
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Click and Pop Reduction
      2. 8.3.2 Negative Signal Swing Capability
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
VCC Supply voltage (3) –0.5 6 V
VNC
VNO
VCOM 		Analog voltage (3) (4) (5) VCC – 6 VCC + 0.5 V
II/OK Analog port diode current VNC, VNO, VCOM < 0
or
VNC, VNO, VCOM > VCC 		–50 50 mA
INC
INO
ICOM 		ON-state switch current VNC, VNO, VCOM = 0 to VCC –150 150 mA
ON-state peak switch current (6) –300 300
IRSH OFF-state switch Shunt Resistor current –20 20
INC (3) (7) (8)
INO (3) (7) (8)
ICOM (3) (7) (8) 		ON-state switch current VNC, VNO, VCOM = 0 to VCC –350 350 mA
ON-state peak switch current (6) –500 500
VIN Digital input voltage range –0.5 6.5 V
IIK Digital input clamp current (3) (4) VI < 0 –50 50 mA
ICC
IGND 		Continuous current through VCCor GND –100 100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle.
(7) VCC = 3.0 V to 5.0 V, TA = –40°C to 85°C.
(8) For YZP package only.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 2.3 5.5 V
VNC
VNO
VCOM 		Signal path voltage VCC – 5.5 VCC V
VIN Digital control GND 5.5 V

6.4 Thermal Information

THERMAL METRIC (1) TS5A22364 UNIT
DGS (VSSOP) DRC (VSON) YZP (DSBGA)
10 PINS 10 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 163.3 44.3 90.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.4 70.1 0.3 °C/W
RθJB Junction-to-board thermal resistance 83.1 19.3 8.3 °C/W
ψJT Junction-to-top characterization parameter 6.8 2.0 3.2 °C/W
ψJB Junction-to-board characterization parameter 81.8 19.4 8.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 6.2 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics for 2.5-V Supply

VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC 		Analog signal
range		 VCC – 5.5 VCC V
Ron ON-state
resistance		 VNC or VNO = VCC, 1.5 V,
VCC – 5.5 V
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 2.3 V 0.65 0.94 Ω
Full 1.3
25°C 2.7 V 0.65 0.94 Ω
Full 1.3
ΔRon ON-state
resistance match
between channels		 VNC or VNO = 1.5 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 2.7 V 0.023 0.11 Ω
Full 0.15
Ron(flat) ON-state
resistance
flatness		 VNC or VNO = VCC, 1.5 V,
VCC – 5.5 V
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 2.7 V 0.18 0.46 Ω
Full 0.5
RSH Shunt switch resistance
 INO or INC = 10 mA Full 2.7 V 25 50 Ω
ICOM(ON) COM
ON leakage
current		 VNC and VNO = Floating,
VCOM = VCC,VCC – 5.5 V,		 See Figure 15 25°C 2.7 V –50 50 nA
Full –375 375
DIGITAL CONTROL INPUTS (IN) (2)
VIH Input logic high Full 1.4 5.5 V
VIL Input logic low 0.4
IIH, IIL Input leakage current VIN = VCC or 0 25°C 2.7 V –250 250 nA
Full –250 250
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 300 Ω,		 CL = 35 pF,
see Figure 17 		25°C 2.5 V 44 80 ns
Full 2.3 V to 2.7 V 120
tOFF Turnoff time VCOM = VCC,
RL = 300 Ω,		 CL = 35 pF,
see Figure 17 		25°C 2.5 V 22 70 ns
Full 2.3 V to 2.7 V 70
tBBM Break-before-make time See Figure 18 25°C 2.5 V 1 7 ns
QC Charge injection VGEN = 0, RGEN = 0 CL = 1 nF, see Figure 22 25°C 2.5 V 215 pC
CCOM(ON) NC, NO, COM
ON capacitance		 VCOM = VCC or GND,
Switch ON, f = 10 MHz		 See Figure 16 25°C 2.5 V 370 pF
CI Digital input capacitance VIN = VCC or GND See Figure 16 25°C 2.5 V 2.6 pF
BW Bandwidth RL = 50 Ω, –3 dB 25°C 2.5 V 17 MHz
OISO OFF isolation RL = 50 Ω f = 100 kHz, see Figure 20 25°C 2.5 V –66 dB
XTALK Crosstalk RL = 50 Ω f = 100 kHz,
see Figure 21 		25°C 2.5 V –75 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 35 pF,		 f = 20 Hz to
20 kHz, see Figure 23 		25°C 2.5 V 0.01%
SUPPLY
ICC Positive
supply current		 VCOM and VIN = VCC or GND,
VNC and VNO = Floating		 25°C 2.7 V 0.2 1.1 μA
Full 1.3
VCOM = VCC – 5.5,
VIN = VCC or GND,
VNC and VNO = Floating		 Full 2.7 V 3.3 μA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Floating digital inputs will cause excessive current consumption. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.6 Electrical Characteristics for 3.3-V Supply

VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC 		Analog signal
range		 VCC – 5.5 VCC V
Ron ON-state
resistance		 VNC or VNO ≤ VCC, 1.5 V,
VCC – 5.5 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 3 V 0.61 0.87 Ω
Full 0.97
ΔRon ON-state
resistance match
between channels		 VNC or VNO = 1.5 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 3 V 0.024 0.13 Ω
Full 0.13
Ron(flat) ON-state
resistance
flatness		 VNC or VNO ≤ VCC, 1.5 V,
VCC – 5.5 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 3 V 0.12 0.46 Ω
Full 0.5
RSH Shunt switch resistance INO or INC = 10 mA Full 3 V 25 37 Ω
ICOM(ON) COM
ON leakage
current		 VNC and VNO = Open,
VCOM = VCC,VCC – 5.5 V,		 COM to NO or NC,
see Figure 15 		25°C 3.6 V –50 50 nA
Full –375 375
DIGITAL CONTROL INPUTS (IN) (2)
VIH Input logic high Full 1.4 5.5 V
VIL Input logic low 0.6
IIH, IIL Input leakage current VIN = VCC or 0 25°C 3.6 V –250 250 nA
Full –250 250
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 300 Ω,		 CL = 35 pF,
see Figure 17 		25°C 3.3 V 34 80 ns
Full 3 V to 3.6 V 120
tOFF Turnoff time VCOM = VCC,
RL = 300 Ω,		 CL = 35 pF,
see Figure 17 		25°C 3.3 V 19 70 ns
Full 3 V to 3.6 V 70
tBBM Break-before-make time See Figure 18 25°C 3.3 V 1 7 ns
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF,
see Figure 22 		25°C 3.3 V 300 pC
CCOM(ON) NC, NO, COM
ON capacitance		 VCOM = VCC or GND,
f = 10 MHz		 See Figure 16 25°C 3.3 V 370 pF
CI Digital input capacitance VIN = VCC or GND See Figure 16 25°C 3.3 V 2.6 pF
BW Bandwidth RL = 50 Ω, –3 dB Switch ON, 25°C 3.3 V 17.5 MHz
OISO OFF isolation RL = 50 Ω, f = 100 kHz,
see Figure 20 		25°C 3.3 V –68 dB
XTALK Crosstalk RL = 50 Ω, f = 100 kHz,
see Figure 21 		25°C 3.3 V –76 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 35 pF, 		f = 20 Hz to 20 kHz,
see Figure 23 		25°C 3.3 V 0.008%
SUPPLY
ICC Positive
supply current 		VCOM and VIN = VCC or GND,
VNC and VNO = Floating		 25°C 3.6 V 0.1 1.2 μA
Full 1.3
VCOM = VCC – 5.5 V,
VIN = VCC or GND,
VNC and VNO = Floating		 Full 3.6 V 3.4 μA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All digital inputs of the device must be held at VCC or GND to ensure proper device operation. Floating digital inputs will cause excessive current consumption. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.7 Electrical Characteristics for 5-V Supply

VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
VCOM,
VNO, VNC 		Analog signal
range		 VCC – 5.5 VCC V
Ron ON-state
resistance		 VNC or VNO = VCC, 1.6 V,
VCC = –5.5 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 4.5 V 0.52 0.74 Ω
Full 0.83
ΔRon ON-state
resistance match
between channels		 VNC or VNO = 1.6 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 4.5 V 0.04 0.23 Ω
Full 0.30
Ron(flat) ON-state
resistance
flatness		 VNC or VNO = VCC, 1.6 V,
VCC = –5.5 V,
ICOM = –100 mA,		 COM to NO or NC,
see Figure 13 		25°C 4.5 V 0.076 0.46 Ω
Full 0.5
RSH Shunt switch resistance INO or INC = 10 mA Full 4.5 V 16 36 Ω
ICOM(ON) COM
ON leakage
current		 VNC and VNO = Open,
VCOM = VCC, VCC – 5.5 V,		 See Figure 15 25°C 5.5 V –50 50 nA
Full –375 375
DIGITAL CONTROL INPUTS (IN) (2)
VIH Input logic high Full 2.4 5.5 V
VIL Input logic low 0.8
IIH, IIL Input leakage current VIN = VCC or 0 25°C 5.5 V –250 250 nA
Full –250 250
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 300 Ω,		 CL = 35 pF,
see Figure 17 		25°C 5 V 27 80 ns
Full 4.5 V to 5.5 V 80
tOFF Turnoff time VCOM = VCC,
RL = 300 Ω,		 CL = 35 pF,
see Figure 17 		25°C 5 V 13 70 ns
Full 4.5 V to 5.5 V 70
tBBM Break-before-make time VNC = VNO = VCC/2
RL = 300 Ω,		 CL = 35 pF, 25°C 5 V 1 3.5 ns
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF,
see Figure 22 		25°C 5 V 500 pC
CCOM(ON) NC, NO, COM
ON capacitance		 VCOM = VCC or GND, See Figure 16 25°C 5 V 370 pF
CI Digital input capacitance VIN = VCC or GND See Figure 16 25°C 5 V 2.6 pF
BW Bandwidth RL = 50 Ω, 25°C 5 V 18.3 MHz
OISO OFF isolation RL = 50 Ω, f = 100 kHz,
see Figure 20 		25°C 5 V –70 dB
XTALK Crosstalk RL = 50 Ω, f = 100 kHz,
see Figure 21 		25°C 5 V –78 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 35 pF,		 f = 20 Hz to 20 kHz,
see Figure 23 		25°C 5 V 0.009%
SUPPLY
ICC Positive
supply current		 VCOM and VIN = VCC or GND,
VNC and VNO = Floating		 25°C 5.5 V 0.2 1.3 μA
Full 3.5
VCOM = VCC – 5.5,
VIN = VCC or GND,
VNC and VNO = Floating		 Full 5
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Floating digital inputs will cause excessive current consumption. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.8 Typical Characteristics

TS5A22364 g_ron_vcom_cds261.gif
Figure 1. Ron vs VCOM
TS5A22364 g_ron_vcom_3.3_cds261.gif
Figure 3. Ron vs VCOM (VCC = 3.3 V)
TS5A22364 g_insloss_cds261.gif
Figure 5. Insertion Loss
TS5A22364 g_qc_vcom_cds261.gif
Figure 7. Charge Injection (QC) vs VCOM
TS5A22364 g_thd_freq_cds261.gif
Figure 9. Total Harmonic Distortion vs Frequency
TS5A22364 g_tonoff_volt_cds261.gif
Figure 11. TON and TOFF vs Supply Voltage
TS5A22364 g_ron_vcom_2.7_cds261.gif
Figure 2. Ron vs VCOM (VCC = 2.7 V)
TS5A22364 g_ron_vcom_5_cds261.gif
Figure 4. Ron vs VCOM (VCC = 5 V)
TS5A22364 g_oiso_freq_cds261.gif
Figure 6. Off Isolation vs Frequency
TS5A22364 g_xtalk_cds261.gif
Figure 8. Crosstalk (VCC = 3.3 V)
TS5A22364 g_icc_v_cds261.gif
Figure 10. Power-Supply Current vs VCC
TS5A22364 g_tonoff_temp_cds261.gif
Figure 12. TON and TOFF vs Temperature (2.5-V Supply)
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