米6体育平台手机版

ZHCSTB3A October 2023 – October 2023 TSM24B

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

6.6 Electrical Characteristics

At T_A = 25°C unless otherwise noted

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO < 100 nA			24	V
I_LEAK	Leakage current at V_RWM	V_IO = 24 V, I/O to GND		25	75	nA
V_BR	Breakdown voltage, I/O to GND ⁽¹⁾	I_IO = 10 mA	26.5			V
V_FWD	Forward Voltage, GND to I/O ⁽¹⁾	I_IO = 10 mA		0.7		V
V_CLAMP	Surge clamping voltage, t_p = 8/20 µs ⁽²⁾	I_PP = 20 A, I/O to GND		33		V
V_CLAMP	Surge clamping voltage, t_p = 8/20 µs ⁽²⁾	I_PP = 20 A, GND to I/O		6	8	V
C_LINE	Line capacitance, IO to GND	V_IO= 0 V, f = 1 MHz		24	37.5	pF

(1) V_BR is defined as the voltage when 10 mA is applied in the positive-going direction.

(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.