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ZHCSQN3A June 2022 – October 2022 TSM36A

PRODUCTION DATA

6.6 Electrical Characteristics

T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	Device	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage		TSM36A	0		36	V
V_BRF	Forward breakdown voltage(1)	I_IO = –10 mA	TSM36A		0.8		V
V_BRR	Reverse breakdown voltage(1)	I_IO = 10 mA	TSM36A	37.8		44.2	V
V_CLAMP	Clamping voltage⁽²⁾	I_PP = 25A, t_p = 8/20 µs, from IO to GND	TSM36A		50		V
V_CLAMP	Clamping voltage⁽²⁾	I_PP = 40 A, t_p = 8/20 µs, from IO to GND	TSM36A		57		V
I_LEAK	Leakage current	V_IO = +36 V	TSM36A			1	μA
R_DYN	Dynamic resistance	t_p = 8/20 µs, from IO to GND	TSM36A		0.5		Ω
C_IO-GND	Line capacitance	V_IO = 0 V, f = 1 MHz, V_p-p = 30 mV	TSM36A		50	80	pF

(1) V_BRF and V_BRR are defined as the voltage when ±10 mA is applied in the positive-going direction.

(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.