ZHCSHW9C March 2018 – July 2024 TUSB1002A
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
It may be necessary to incorporate an ESD component to protect the TUSB1002A from electrostatic discharge (ESD). TI recommends following the ESD protection recommendations listed in Table 7-2. A clamp voltage greater than value specified in Table 7-2 may require a RESD on each differential pin. Place the ESD component near the USB connector.
Parameter | Recommendation |
---|---|
Breakdown voltage | ≥ 3.5V |
I/O line capacitance | Data rates ≤ 5Gbps: ≤ 0.50pF |
Data rates > 5Gbps: ≤ 0.35pF | |
Delta capacitance between any P and N I/O pins | ≤ 0.07pF |
Clamping voltage at 8A IPP IO to GND (1) | ≤ 4.5V |
Typical dynamic resistance | ≤ 30mΩ |
Manufacturer | Part Number | RESD to pass IEC 61000-4-2 Contact ±8kV |
---|---|---|
Nexperia | PUSB3FR4 | 2Ω |
Nexperia | PESD2V8Y1BSF | 2Ω |
Texas Instruments | TPD1E04U04DPLR | 2Ω |
Texas Instruments | TPD4E02B04DQAR | 2Ω |