ZHCSDS6D May   2015  – October 2017 TUSB211

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
      1. 7.3.1 Low Speed (LS) Mode
      2. 7.3.2 Full Speed (FS) Mode
      3. 7.3.3 High Speed (HS) Mode
      4. 7.3.4 Disable Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 For a Host Side Application
        2. 8.2.2.2 For a Device Side Application
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 相关链接
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage range VCC –0.3 3.8 V
Voltage range D1P, D1M, D2P, D2M, RSTN, EQ –0.3 3.8 V
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±3000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 3 3.3 3.6 V
TA Operating free-air temperature [TUSB211] 0 70 °C
Operating free-air temperature [TUSB211I] –40 85

6.4 Thermal Information

THERMAL METRIC (1) RWB UNIT
12 PINS
RθJA Junction-to-ambient thermal resistance 161.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.3 °C/W
RθJB Junction-to-board thermal resistance 75.1 °C/W
ψJT Junction-to-top characterization parameter 1.9 °C/W
ψJB Junction-to-board characterization parameter 75.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
I(ACTIVE_HS) High Speed Active Current USB channel = HS mode. 480 Mbps traffic. VCC supply stable 16 20 mA
I(IDLE_HS) High Speed Idle Current USB channel = HS mode. No traffic. VCC supply stable 12 15 mA
I(SUSPEND_HS) Suspend Current USB channel = Suspend mode. 4.5 5.5 mA
I(FS) Full-Speed Current USB channel = FS mode 4.5 5.5 mA
I(LS) Low-Speed Current USB channel = LS mode 4.5 5.5 mA
I(DISCONN) Disconnect Power Host side application. No device attachment. 4.5 5.5 mA
I(RSTN) Disable Power RSTN driven low; VCC supply stable; VCC = 3.3 V 4.5 5.5 mA
RSTN
VIH High level input voltage 2 VCC V
VIL Low-level input voltage 0 0.8 V
IIH High level input current VIH = 3.6 V, VCC = 3 V, RPU enabled ±2 µA
IIL Low level input current VIL = 0V, VCC = 3.6 V, RPU enabled ±11 µA
EQ
R(EQ) External pulldown resistor Level 0 EQ 0.32 kΩ
Level 1 EQ 1.4 2.2 kΩ
Level 2 EQ [MAX] 3.7 4.1 kΩ
Level 3 EQ [MIN] 6 kΩ
CD, ENA_HS
VOH High level output voltage IO = –50 µA 2.4 V
VOL Low level output voltage IO = 50 µA 0.4 V
DxP, DxM
T(SHRT_GND) DP, DM low voltage short circuit DxP or DxM short circuited to GND continuously for 24 hours
at TA = 25°C only		 0 V
CIO(DXX) Capacitance to GND Measured with LCR meter and device powered down. 1 MHz sinusoid, 30 mVpp ripple 5 pF
(1) (1) All typical values are at VCC = 3.3 V, and TA = 25°C.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
DxP, DxM
F(BR_DXX) Bit Rate USB channel = HS mode. 480 Mbps traffic. VCC supply stable 480 Mbps
t(R/F_DXX) Rise/Fall time 100 ps
CD, ENA_HS
t(EN) Enable time 20 µs
t(DIS) Disable time 20 µs
VCC
t(STABLE) VCC stable before RSTN de-assertion 100 µs
t(RAMP) VCC ramp time 0.2 100 ms
(1) (1) All typical values are at VCC = 3.3 V, and TA = 25°C.
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