ZHCSFL6E July 2016 – November 2023 TUSB522P
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
3-State CMOS Inputs(EQ1/2, DE1/2) | ||||||
VIH | High-level input voltage | VCC x 0.8 | V | |||
VIM | Mid-level input voltage | VCC / 2. | V | |||
VIL | Low-level input voltage | VCC x 0.2 | V | |||
VF | Floating voltage | VIN = High impedance | 0.36 x VCC | V | ||
RPU | Internal pull-up resistance | 410 | kΩ | |||
RPD | Internal pull-down resistance | 240 | kΩ | |||
IIH | High-level input current | VIN = 3.6 V | 26 | µA | ||
IIL | Low-level input current | VIN = GND, VCC = 3.6.V | –26 | µA | ||
2-State CMOS Input (OS1/2, EN_RXD) | ||||||
VIH | High-level input voltage | VCC x 0.7 | V | |||
VIL | Low-level input voltage | VCC x 0.3 | V | |||
RPD | Internal pull-down resistance | 660 | kΩ | |||
IIH | Low-level input current | VIN = 3.6 V | 25 | µA | ||
IIL | Low-level input current | VIN = GND, VCC = 3.6.V | –10 | µA |