ZHCSEG8F December 2015 – December 2023 TUSB542
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
TRI-STATE CMOS INPUTS (CNFG_A1, CNFG_B1, CNFG_A2 and CNFG_B2) | ||||||
VIH | High-level input voltage | VCC x 0.75 | V | |||
VIM | Mid-level input voltage | VCC / 2 | V | |||
VIL | Mid-level input voltage | VCC x 0.25 | V | |||
VF | Floating voltage | VIN = High impedance | VCC / 2 | V | ||
R(PU) | Internal pull-up resistance | 105 | kΩ | |||
R(PD) | Internal pull-down resistance | 105 | kΩ | |||
IIH | High-level input current | VIN = 1.98V | 26 | µA | ||
IIL | Low-level input current | VIN = GND | –26 | µA | ||
Ilkg | External leakage current (from application board + Application Processor pin high impedance) tolerance | VIN = GND or VIN = 1.98V | –1 | 1 | µA | |
CMOS INPUT – SEL | ||||||
VIH | High-level input voltage | VCC x 0.7 | V | |||
VIL | Mid-level input voltage | VCC x 0.3 | V | |||
IIH | High-level input current | VIN = 1.98V | 5 | µA | ||
IIL | Low-level input current | VIN = GND | –16 | µA |