ZHCSCO0B July   2014  – January 2016 TUSB8041-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics, 3.3-V I/O
    6. 7.6 Timing Requirements, Power-Up
    7. 7.7 Hub Input Supply Current
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Battery Charging Features
      2. 8.3.2 USB Power Management
      3. 8.3.3 One Time Programmable (OTP) Configuration
      4. 8.3.4 Clock Generation
      5. 8.3.5 Crystal Requirements
      6. 8.3.6 Input Clock Requirements
      7. 8.3.7 Power-Up and Reset
    4. 8.4 Device Functional Modes
      1. 8.4.1 External Configuration Interface
      2. 8.4.2 I2C EEPROM Operation
      3. 8.4.3 SMBus Slave Operation
    5. 8.5 Register Maps
      1. 8.5.1  Configuration Registers
      2. 8.5.2  ROM Signature Register
      3. 8.5.3  Vendor ID LSB Register
      4. 8.5.4  Vendor ID MSB Register
      5. 8.5.5  Product ID LSB Register
      6. 8.5.6  Product ID MSB Register
      7. 8.5.7  Device Configuration Register
      8. 8.5.8  Battery Charging Support Register
      9. 8.5.9  Device Removable Configuration Register
      10. 8.5.10 Port Used Configuration Register
      11. 8.5.11 Device Configuration Register 2
      12. 8.5.12 USB 2.0 Port Polarity Control Register
      13. 8.5.13 UUID Registers
      14. 8.5.14 Language ID LSB Register
      15. 8.5.15 Language ID MSB Register
      16. 8.5.16 Serial Number String Length Register
      17. 8.5.17 Manufacturer String Length Register
      18. 8.5.18 Product String Length Register
      19. 8.5.19 Serial Number String Registers
      20. 8.5.20 Manufacturer String Registers
      21. 8.5.21 Product String Registers
      22. 8.5.22 Additional Feature Configuration Register
      23. 8.5.23 Device Status and Command Register
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Discrete USB Hub Product
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Upstream Port Implementation
          2. 9.2.1.2.2 Downstream Port 1 Implementation
          3. 9.2.1.2.3 Downstream Port 2 Implementation
          4. 9.2.1.2.4 Downstream Port 3 Implementation
          5. 9.2.1.2.5 Downstream Port 4 Implementation
          6. 9.2.1.2.6 VBUS Power Switch Implementation
          7. 9.2.1.2.7 Clock, Reset, and Misc
          8. 9.2.1.2.8 TUSB8041-Q1 Power Implementation
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 TUSB8041-Q1 Power Supply
    2. 10.2 Downstream Port Power
    3. 10.3 Ground
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Placement
      2. 11.1.2 Package Specific
      3. 11.1.3 Differential Pairs
    2. 11.2 Layout Examples
      1. 11.2.1 Upstream Port
      2. 11.2.2 Downstream Port
  12. 12器件和文档支持
    1. 12.1 社区资源
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PAP|64
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage Range VDD Steady-state supply voltage –0.3 1.4 V
VDD33 Steady-state supply voltage –0.3 3.8 V
Voltage Range USB_SSRXP_UP, USB_SSRXN_UP, USB_SSRXP_DN[4:1], USB_SSRXN_DP[4:1] and USB_VBUS terminals -0.3 1.4 V
XI terminals -0.3 2.45 V
All other terminals -0.3 3.8 V
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002 Classification Level H2(1) ±2000 V
Charged device model (CDM), per AEC Q100-011 Classification Level C4B Corner pins ±750
Other pins ±500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD 1.V1 supply voltage 0.99 1.1 1.26 V
VDD33 3.3V supply voltage 3 3.3 3.6 V
USB_VBUS Voltage at USB_VBUS PAD 0 1.155 V
TA Operating free-air temperature –40 85 °C
TJ Operating junction temperature –40 105 °C

7.4 Thermal Information

THERMAL METRIC(1) TUSB8041-Q1 UNIT
PAP
64 PINS
RθJA Junction-to-ambient thermal resistance(2) 26.2 °C/W
RθJCtop Junction-to-case (top) thermal resistance(3) 11.5
RθJB Junction-to-board thermal resistance(4) 10.4
ψJT Junction-to-top characterization parameter(5) 0.2
ψJB Junction-to-board characterization parameter(6) 10.3
RθJCbot Junction-to-case (bottom) thermal resistance(7) 0.6
(1) 有关传统和新热指标的更多信息，请参见应用报告《半导体和 IC 封装热指标》（文献编号：SPRA953）。
(2) 在 JESD51-2a 描述的环境中，按照 JESD51-7 的规定，在一个 JEDEC 标准高 K 电路板上进行仿真，从而获得自然对流条件下的结至环境热阻抗。
(3) 通过在封装顶部进行冷板测试仿真来获得结至外壳（顶部）热阻。JEDEC 标准中没有相关测试的描述，但 可在 ANSI SEMI 标准 G30 - 88 中找到相应的说明。
(4) 结至板热阻，可按照 JESD51-8 中的说明在使用环形冷板夹具来控制 PCB 温度的环境中进行仿真来获得。
(5) 结点至顶部特性参数 ψJT 估算器件在实际系统中的结温，可通过 JESD51-2a（第 6 节和第 7 节）介绍的步骤从获得 RθJA 的仿真数据中获取该温度。
(6) 结点至电路板特性参数 ψJB 估算器件在实际系统中的结温，可通过 JESD51-2a（第 6 节和第 7 节）介绍的步骤从获得 RθJA 的仿真数据中获取该温度。
(7) 通过在外露（电源）焊盘上进行冷板测试仿真来获得结至外壳（底部）热阻。JEDEC 标准中没有相关测试的描述，但 可在 ANSI SEMI 标准 G30 - 88 中找到相应的说明。
空白

7.5 Electrical Characteristics, 3.3-V I/O

over operating free-air temperature range (unless otherwise noted)
PARAMETER OPERATION TEST CONDITIONS MIN MAX UNIT
VIH High-level input voltage(1) VDD33 2 VDD33 V
VIL Low-level input voltage(1) VDD33 0 0.8 V
JTAG pins only 0 0.55
VI Input voltage 0 VDD33 V
VO Output voltage(2) 0 VDD33 V
tt Input transition time (trise and tfall) 0 25 ns
Vhys Input hysteresis(3) 0.13 x VDD33 V
VOH High-level output voltage VDD33 IOH = -4 mA 2.4 V
VOL Low-level output voltage VDD33 IOL = 4 mA 0.4 V
IOZ High-impedance, output current(2) VDD33 VI = 0 to VDD33 ±20 µA
IOZP High-impedance, output current with internal pullup or pulldown resistor(4) VDD33 VI = 0 to VDD33 ±250 µA
II Input current(5) VDD33 VI = 0 to VDD33 ±15 µA
(1) Applies to external inputs and bidirectional buffers.
(2) Applies to external outputs and bidirectional buffers.
(3) Applies to GRSTz.
(4) Applies to pins with internal pullups/pulldowns.
(5) Applies to external input buffers.

7.6 Timing Requirements, Power-Up

PARAMETER DESCRIPTION MIN TYP MAX UNIT
td1 VDD33 stable before VDD stable(3) See (2) ms
td2 VDD and VDD33 stable before de-assertion of GRSTz 3 ms
tsu_io Setup for MISC inputs(1) sampled at the de-assertion of GRSTz 0.1 µs
thd_io Hold for MISC inputs(1) sampled at the de-assertion of GRSTz 0.1 µs
tVDD33_RAMP VDD33 supply ramp requirements 0.2 100 ms
tVDD_RAMP VDD supply ramp requirements 0.2 100 ms
(1) MISC pins sampled at de-assertion of GRSTz: FULLPWRMGMTz, GANGED, PWRCTL_POL, SMBUSz, BATEN[4:1], and AUTOENz.
(2) There is no power-on relationship between VDD33 and VDD unless GRSTz is only connected to a capacitor to GND. Then VDD must be stable minimum of 10 μs before the VDD33.
(3) An active reset is required if the VDD33 supply is stable before the VDD11 supply. This active Reset shall meet the 3ms power-up delay counting from both power supplies being stable to the de-assertion of GRSTz.
TUSB8041-Q1 pwr_up_timing_sllsee4.gif Figure 2. Power-Up Timing Requirements

7.7 Hub Input Supply Current

Typical values measured at TA = 25°C
PARAMETER VDD33 VDD UNIT
3.3 V 1.1 V
LOW POWER MODES
Power On (after Reset)                    2.3 28 mA
Upstream Disconnect 2.3 28 mA
Suspend                                   2.5 33 mA
ACTIVE MODES (US state / DS State)
3.0 host / 1 SS Device and Hub in U1 / U2 49 225 mA
3.0 host / 1 SS Device and Hub in U0 49 366 mA
3.0 host / 2 SS Devices and Hub in U1 / U2 49 305 mA
3.0 host / 2 SS Devices and Hub in U0 49 508 mA
3.0 host / 3 SS Devices and Hub in U1 / U2 49 380 mA
3.0 host / 3 SS Devices and Hub in U0 49 661 mA
3.0 host / 4 SS Devices and Hub in U1 / U2 49 455 mA
3.0 host / 4 SS Devices and Hub in U0 49 778 mA
3.0 host / 1 SS Device in U0 and 1 HS Device 85 395 mA
3.0 host / 2 SS Devices in U0 and 2 HS Devices 99 554 mA
2.0 host / HS Device 45 63 mA
2.0 host / 4 HS Devices 76 86 mA
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