ZHCSKL2A December   2019  – May 2022 TUSS4470

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power-Up Characteristics
    6. 6.6  Transducer Drive
    7. 6.7  Receiver Characteristics
    8. 6.8  Echo Interrupt Comparator Characteristics
    9. 6.9  Digital I/O Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excitation Power Supply (VDRV)
      2. 7.3.2 Burst Generation
        1. 7.3.2.1 Burst Generation Diagnostics
      3. 7.3.3 Direct Transducer Drive
      4. 7.3.4 Analog Front End
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
    6. 7.6 Register Maps
      1. 7.6.1 REG_USER Registers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Transducer Drive Configuration Options
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Transducer Driving Voltage
          2. 8.2.1.2.2 Transducer Driving Frequency
          3. 8.2.1.2.3 Transducer Pulse Count
        3. 8.2.1.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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8.2 Typical Application

GUID-0A4977C1-AAB8-40F7-BE3F-AA9C8AC3A91E-low.gifFigure 8-1 TUSS4470 Application Diagram
Table 8-1 Recommended Component Values for Typical Applications
DESIGNATORVALUECOMMENT
RPWR10 ΩOptional (to limit fast voltage transient on VPWR pin during power up)
R(INP)200Ω (1/4 Watt) Optional higher value for EMI/ESD robustness
CPWR150V, 100nF
CPWR240V, 2µF
CVDD>5V, 10nF
CINP40V, 330pF
CINN>5V, CINNUse equation below to estimate value of CINN depending on the burst frequency
Equation 2. GUID-76D4A416-0BAF-43C7-B028-9E218FA7A0AF-low.gif
CFLT5V, CFLTUse equation below to estimate value of CFLT depending on the burst frequency . Value has to be optimized for application depending on noise and response time requirements.
Equation 3. GUID-C1AC5729-4DD0-4520-B57E-76F95610CD72-low.gif
D11N4001 or equivalentOptional for reverse supply and reverse current protection.
XDCR (transducer)Example devices for low-frequency range:
Closed top: 40 kHz: PUI Audio UTR-1440K-TT-R
Open top: muRata MA40H1S-R, SensComp 40LPT16, Kobitone 255-400PT160-ROX
Example devices for high-frequency range:
Closed top: 300 kHz: Murata MA300D1-1
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