ZHCSHJ8C December 2017 – November 2019 TVS0500
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| ILEAK | Leakage Current | Measured at VIN = VRWM, TA = 27°C | 0.07 | 5.5 | nA | |
| Measured at VIN = VRWM, TA = 85°C | 6.5 | 220 | nA | |||
| Measured at VIN = VRWM, TA = 105°C | 38 | 755 | nA | |||
| VF | Forward Voltage | IIN = 1 mA from GND to IO | 0.25 | 0.5 | 0.65 | V |
| VBR | Break-down Voltage | IIN = 1 mA from IO to GND | 7.5 | 7.9 | 8.4 | V |
| VFCLAMP | Forward Clamp Voltage | 35 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C | 2 | 5 | V | |
| VCLAMP | Clamp Voltage | 24 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C | 8.6 | 8.8 | V | |
| 43 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C | 9.2 | 9.5 | V | |||
| 35 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = VRWM before surge, TA = 125°C | 9.2 | 9.5 | V | |||
| RDYN | 8/20 µs surge dynamic resistance | Calculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C | 30 | 50 | mΩ | |
| CIN | Input pin capacitance | VIN = 5 V, f = 1 MHz, 30 mVpp, IO to GND | 155 | pF | ||
| SR | Maximum Slew Rate | 0-VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, 27°C | 2.5 | V/µs | ||
| 0-VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, 105°C | 0.7 | V/µs | ||||