ZHCSHT0A December 2017 – March 2018 TVS2700
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse Stand-off Voltage | -0.5 | 27 | V | ||
| ILEAK | Leakage Current | Measured at VIN = VRWM, TA = 27°C | 1.8 | 60 | nA | |
| Measured at VIN = VRWM. TA = 85°C | 14.5 | 450 | nA | |||
| Measured at VIN = VRWM,TA = 105°C | 65 | 1500 | nA | |||
| VF | Forward Voltage | IIN = 1 mA from GND to IO | 0.25 | 0.5 | 0.65 | V |
| VBR | Break-down Voltage | IIN = 1 mA from IO to GND | 29.3 | 31.2 | 33.9 | V |
| VFCLAMP | Forward Clamp Voltage | 40 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C | 1 | 2 | 5 | V |
| VCLAMP | Clamp Voltage | 24 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C | 32.2 | 33.9 | V | |
| 40 AIEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = 0 V before surge, 27°C | 32.5 | 34.1 | V | |||
| 35 A IEC 61000-4-5 Surge (8/20 µs) from IO to GND, VIN = Vrwm before surge, TA = 125°C | 33 | 35 | V | |||
| RDYN | 8/20 µs surge dynamic resistance | Calculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C | 30 | mΩ | ||
| CIN | Input pin capacitance | VIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND | 100 | pF | ||
| SR | Maximum Slew Rate | 0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 27°C | 2.5 | V/µs | ||
| 0-VRWM rising edge, sweep rise time and measure slew rate when IPK = 1 mA, 105°C | 0.7 | V/µs | ||||