ZHCSUB8U June 1976 – May 2024
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
Excessive reverse current can damage this device. Reverse current flows through the emitter-base junction of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.
Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VO ≤ VI + 7V. These conditions are:
If reverse current flow is expected in the application, use external protection to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated. Limit reverse current to 5% or less of the rated output current of the device in the event this current cannot be avoided.
Figure 7-2 shows one approach for protecting the device.