ZHCSJJ9A april   2019  – december 2020 UC1825B-SP

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Control Methods
      2. 7.3.2 Synchronization
      3. 7.3.3 High Current Outputs
      4. 7.3.4 Open Loop Test Circuit
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 System Design Theory
        1. 8.2.1.1 Switching Frequency
        2. 8.2.1.2 Transformer
        3. 8.2.1.3 RCD and Diode Clamp
        4. 8.2.1.4 Output Diode
        5. 8.2.1.5 Main Switching MOSFETs
        6. 8.2.1.6 Output Filter and Capacitance
        7. 8.2.1.7 Compensation
        8. 8.2.1.8 Sense Resistor
    3. 8.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Feedback Traces
      2. 10.1.2 Input/Output Capacitors
      3. 10.1.3 Compensation Components
      4. 10.1.4 Traces and Ground Planes
      5. 10.1.5 Ground Planes
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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Main Switching MOSFETs

Each switch applies the input voltage across the transformer and the voltage is then divided down by the turns ratio and applied to the secondary side. Since the magnitude of the voltage across the windings is the input voltage, when the switch is off the primary switching MOSFETs will see twice the input voltage as the voltage stress plus some amount of ringing. This means the MOSFETs chosen for a push-pull topology should have a voltage rating of about 2.5 to 3 times higher than the input voltage.