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SGLS318A November 2005 – November 2015 UC2854B-EP

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DW|16
- MSOI003I

散热焊盘机械数据 (封装 | 引脚)

DW|16
- QFND313D

订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_CC	Supply voltage		22	V
Input voltage	VSENSE, VRMS, ISENSE MOUT		11	V
Input voltage	PKLMT		5	V
I_GTDRV	GTDRV current, continuous		0.5	A
I_GTDRV	GTDRV current, 50% duty cycle		1.5	A
Input current	RSET, IAC, PKLMT, ENA		10	mA
T_J	Junction temperature	−55	150	°C
T_sol	Lead temperature, 1.6 mm (1/16 inch) from case for 10 seconds		300	°C
T_stg	Storage temperature	−65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_CC	Supply voltage	10	20	V
T_J	Operating junction temperature	−55	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		UC2854B-EP		UNIT
		DW (SOIC)
		16 PINS
		HIGH	LOW
R_θJA	Junction-to-ambient thermal resistance ⁽²⁾	36.9	38.4	°C/W
R_θJC	Junction-to-case thermal resistance	73.1	111.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

(2) R_θJA values are based on zero air flow.

7.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
OVERALL
	Supply current, off	CAO = 0 V, VAO = 0 V, V_CC = V_UVLO − 0.3 V		250	400	µA
	Supply current, on			12	18	mA
	V_CC turn-on threshold voltage		8	10.5	11.3	V
	V_CC turn-off threshold voltage		9	10	12	V
	V_CC clamp	I_VCC = I_VCC(on) + 5 mA	18	20	22	V
VOLTAGE AMPLIFIER
	Input voltage		2.9	3	3.1	V
	V_SENSE bias current		−500	−25	500	nA
	Open loop gain	2 V ≤ V_OUT ≤ 5 V	70	100		dB
V_OH	High-level output voltage	I_LOAD = −500 µA		6		V
V_OL	Low-level output voltage	I_LOAD = 500 µA		0.3	0.5	V
I_SC	Output short-circuit current	V_OUT = 0 V		1.5	3.5	mA
	Gain bandwidth product⁽¹⁾	f_IN = 100 kHz, 10 mV_P−P		1		MHz
CURRENT AMPLIFIER
	Input offset voltage	V_CM = 0 V, T_A = 25°C	−4		0	mV
	Input offset voltage	V_CM = 0 V, overtemperature	−5.5		0	mV
	Input bias current, ISENSE	V_CM = 0 V	−500		500	nA
	Open loop gain	2 V ≤ V_OUT ≤ 6 V	80	110		dB
V_OH	High-level output voltage	I_LOAD = −500 µA		8		V
V_OL	Low-level output voltage	I_LOAD = 500 µA		0.3	0.5	V
	ISC Output short-circuit current	V_OUT = 0 V		1.5	3.5	mA
	CMRR Common mode rejection range		−0.3		5	V
	Gain bandwidth product⁽¹⁾	f_IN = 100 kHz, 10 mV_P−P	3	5		MHz
REFERENCE
	Output voltage	I_REF = 0 mA, T_A = 25°C	7.4	7.5	7.6	V
	Output voltage	I_REF = 0 mA	7.35	7.5	7.65	V
	Load regulation	1 mA ≤ I_REF ≤ 10 mA	0	8	20	mV
	Line regulation	12 V ≤ V_CC ≤ 18 V	0	14	25	mV
	ISC Short circuit current	V_REF = 0 V	25	35	60	mA
OSCILLATOR
	Initial accuracy	T_A = 25°C	85	100	115	kHz
	Voltage stability	12 V ≤ V_CC ≤ 18 V		1%
	Total variation	Line, temperature	80		120	kHz
	Ramp amplitude (peak-to-peak)		4.9		5.9
	Ramp valley voltage		0.8		1.3	V
ENABLE/SOFT-START/CURRENT LIMIT
	Enable threshold voltage		2.35	2.55	2.90	V
	Enable hysteresis	V_FAULT = 2.5 V		500	600	mV
	Enable input bias current	V_ENA = 0 V		−2	−5	µA
	Propagation delay to disable time(1)	Enable overdrive = 100 mV		300		ns
	Soft-start charge current	V_SS = 2.5 V	10	14	24	µA
	Peak limit offset voltage		−15		15	mV
	Peak limit input current	V_PKLMT = −0.1 V	−200	−100		µA
	Peak limit propagation delay time⁽¹⁾			150		ns
MULTIPLIER
	Output current, I_AC limited	I_AC = 100 µA, V_RMS = 1 V, R_SET = 10 kΩ	−220	−200	−170	µA
	Output current, zero	I_AC = 0 µA, R_SET = 10 kΩ	−2	−0.2	2	µA
	Output current, power limited	V_RMS = 1.5 V, V_A = 6 V	−230	−200	−170	µA
	Output current	V_RMS = 1.5 V, V_A = 2 V		−22		µA
		V_RMS = 1.5 V, V_A = 5 V		−156
		V_RMS = 5 V, V_A = 2 V		−2
		V_RMS = 5 V, V_A = 5 V		−14
	Gain constant⁽²⁾	V_RMS = 1.5 V, V_A = 6 V, T_A = 25°C	−1.1	−1	−0.9	A/A
GATE DRIVER
V_OH	High-level output voltage	I_OUT = −200 mA, V_CC = 15 V	12	12.8		V
V_OL	Low-level output voltage	I_OUT = 200 mA		1	2.2	V
V_OL	Low-level output voltage	I_OUT = 10 mA		300	500	mV
	Low-level UVLO voltage	I_OUT = 50 mA, V_CC = 0 V		0.9	1.5	V
	Output rise time⁽¹⁾	C_LOAD = 1 nF		35		ns
	Output fall time⁽¹⁾	C_LOAD = 1 nF		35		ns
	Output peak current⁽¹⁾	C_LOAD = 10 nF		1		A