ZHCSHQ7B February 2018 – April 2024 UCC21222-Q1
PRODUCTION DATA
PIN | TYPE (1) | Description | |
---|---|---|---|
NAME | NO. | ||
DIS | 5 | I | Disable both driver outputs if asserted high, enable both outputs if set low. It is recommended to tie this pin to ground if not used to achieve better noise immunity. This pin is internally pulled high if left floating. It is recommended to use an RC filter on DIS pin to filter high frequency noise when connecting to a microcontroller, with R = 0 Ω to 100 Ω and C = 100 pF to 1000 pF. |
DT | 6 | I | DT
pin configurations:
|
GND | 4 | P | Primary-side ground reference. All signals in the primary side are referenced to this ground. |
INA | 1 | I | Input signal for A channel. INA input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. Tie this pin to ground if not used to achieve better noise immunity. |
INB | 2 | I | Input signal for B channel. INB input has a TTL/CMOS compatible input threshold. This pin is pulled low internally if left open. Tie this pin to ground if not used to achieve better noise immunity. |
NC | 7 | — | No internal connection |
12 | |||
13 | |||
OUTA | 15 | O | Output of driver A. Connect to the gate of the A channel FET or IGBT. |
OUTB | 10 | O | Output of driver B. Connect to the gate of the B channel FET or IGBT. |
VCCI | 3 | P | Primary-side supply voltage. Locally decoupled to GND using a low ESR/ESL capacitor located as close to the device as possible |
VCCI | 8 | P | This pin is internally shorted to pin 3. |
VDDA | 16 | P | Secondary-side power for driver A. Locally decoupled to VSSA using a low ESR/ESL capacitor located as close to the device as possible |
VDDB | 11 | P | Secondary-side power for driver B. Locally decoupled to VSSB using a low ESR/ESL capacitor located as close to the device as possible. |
VSSA | 14 | P | Ground for secondary-side driver A. Ground reference for secondary side A channel |
VSSB | 9 | P | Ground for secondary-side driver B. Ground reference for secondary side B channel |