SLUSCV6A April   2017  – February 2018 UCC21225A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Functional Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety-Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristics and Thermal Derating Curves
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Pulse Width Distortion
    2. 7.2 Rising and Falling Time
    3. 7.3 Input and Disable Response Time
    4. 7.4 Programable Dead Time
    5. 7.5 Power-up UVLO Delay to OUTPUT
    6. 7.6 CMTI Testing
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Diode Structure in UCC21225A
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Pin
      2. 8.4.2 Programmable Dead Time (DT) Pin
        1. 8.4.2.1 Tying the DT Pin to VCC
        2. 8.4.2.2 DT Pin Left Open or Connected to a Programming Resistor between DT and GND Pins
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing INA/INB Input Filter
        2. 9.2.2.2 Select External Bootstrap Diode and Series Resistor
        3. 9.2.2.3 Gate Driver Output Resistor
        4. 9.2.2.4 Estimate Gate Driver Power Loss
        5. 9.2.2.5 Estimating Junction Temperature
        6. 9.2.2.6 Selecting VCCI, VDDA/B Capacitor
          1. 9.2.2.6.1 Selecting a VCCI Capacitor
          2. 9.2.2.6.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 9.2.2.6.3 Select a VDDB Capacitor
        7. 9.2.2.7 Dead Time Setting Guidelines
        8. 9.2.2.8 Application Circuits with Output Stage Negative Bias
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Certifications
      1. 12.2.1 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6.9 Electrical Characteristics

VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY CURRENTS
IVCCI VCCI quiescent current VINA = 0 V, VINB = 0 V 1.5 2.0 mA
IVDDA,
IVDDB		 VDDA and VDDB quiescent current VINA = 0 V, VINB = 0 V 1.0 1.8 mA
IVCCI VCCI operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.0 mA
IVDDA,
IVDDB		 VDDA and VDDB operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.5 mA
VCCI SUPPLY UNDERVOLTAGE LOCKOUT THRESHOLDS
VVCCI_ON Rising threshold VCCI_ON 2.55 2.7 2.85 V
VVCCI_OFF Falling threshold VCCI_OFF 2.35 2.5 2.65 V
VVCCI_HYS Threshold hysteresis 0.2 V
VDD SUPPLY UNDERVOLTAGE LOCKOUT THRESHOLDS
VVDDA_ON,
VVDDB_ON		 Rising threshold VDDA_ON, VDDB_ON 5.7 6.0 6.3 V
VVDDA_OFF,
VVDDB_OFF		 Falling threshold VDDA_OFF, VDDB_OFF 5.4 5.7 6 V
VVDDA_HYS,
VVDDB_HYS		 Threshold hysteresis 0.3 V
INA, INB AND DISABLE
VINAH, VINBH, VDISH Input high voltage 1.6 1.8 2 V
VINAL, VINBL, VDISL Input low voltage 0.8 1 1.2 V
VINA_HYS, VINB_HYS, VDIS_HYS Input hysteresis 0.8 V
VINA, VINB Negative transient, ref to GND, 50 ns pulse Not production tested, bench test only –5 V
OUTPUT
IOA+, IOB+ Peak output source current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 4 A
IOA-, IOB- Peak output sink current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 6 A
ROHA, ROHB Output resistance at high state IOUT = –10 mA, TA = 25°C, ROHA, ROHBdo not represent drive pull-up performance. See tRISE in Switching Characteristics and Output Stage for details. 5 Ω
ROLA, ROLB Output resistance at low state IOUT = 10 mA, TA = 25°C 0.55 Ω
VOHA, VOHB Output voltage at high state VVDDA, VVDDB = 12 V, IOUT = –10 mA, TA = 25°C 11.95 V
VOLA, VOLB Output voltage at low state VVDDA, VVDDB = 12 V, IOUT = 10 mA, TA = 25°C 5.5 mV
DEADTIME AND OVERLAP PROGRAMMING
Dead time Pull DT pin to VCCI Overlap determined by INA INB -
DT pin is left open, min spec characterized only, tested for outliers 0 8 15 ns
RDT = 20 kΩ 160 200 240 ns
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