SLUSFF3A January   2024  – June 2024 UCC21330-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings (Automotive)
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Pulse Width Distortion
    2. 6.2 Rising and Falling Time
    3. 6.3 Input and Disable Response Time
    4. 6.4 Programmable Dead Time
    5. 6.5 Power-up UVLO Delay to OUTPUT
    6. 6.6 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21330-Q1
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Pin
      2. 7.4.2 Programmable Dead-Time (DT) Pin
        1. 7.4.2.1 Tying the DT Pin to VCC
        2. 7.4.2.2 DT Pin Connected to a Programming Resistor Between DT and GND Pins
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Designing INA/INB Input Filter
        2. 8.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 8.2.2.3 Gate Driver Output Resistor
        4. 8.2.2.4 Gate to Source Resistor Selection
        5. 8.2.2.5 Estimate Gate Driver Power Loss
        6. 8.2.2.6 Estimating Junction Temperature
        7. 8.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.7.1 Selecting a VCCI Capacitor
          2. 8.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.7.3 Select a VDDB Capacitor
        8. 8.2.2.8 Dead Time Setting Guidelines
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Certifications
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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5.6 Insulation Specifications

PARAMETER TEST CONDITIONS SPECIFICATION UNIT
General
CLR External clearance(1) Shortest terminal-to-terminal distance through air >4 mm
CPG External Creepage(1) Shortest terminal-to-terminal distance across the package surface >4 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) >17 µm
CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 > 400 V
Material Group According to IEC 60664-1 II
Overvoltage category Rated mains voltage ≤ 150 VRMS I-IV
Rated mains voltage ≤ 300 VRMS I-III
DIN EN IEC 60747-17 (VDE 0884-17)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 1200 VPK
VIOWM Maximum isolation working voltage AC voltage (sine wave); time-dependent dielectric breakdown (TDDB) test; see Figure 6-1 850 VRMS
DC voltage 1200 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 s (qualification)
VTEST = 1.2 × VIOTM, t = 1 s (100% production)		 4242 VPK
VIMP Maximum inpulse voltage Tested in air, 1.2/50-µs waveform per IEC 62368-1 5000 VPK
VIOSM Maximum surge isolation voltage(2) VIOSM ≥ 1.3 x VIMP; Tested in oil (qualification test), 1.2/50-μs waveform per IEC 62368-1 6500 VPK
qpd Apparent charge(3) Method a: After I/O safety test subgroup 2/3, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 × VIORM , tm = 10 s ≤5 pC
Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.3 × VIORM, tm = 10 s ≤5
Method b1: At routine test (100% production) and preconditioning (type test), Vini = 1.2 × VIOTM, tini = 1 s; Vpd(m) = 1.5 × VIORM , tm = 1 s ≤5
CIO Barrier capacitance, input to output(4) VIO = 0.4 × sin (2πft), f = 1 MHz ~1.2 pF
RIO Insulation resistance, input to output(4) VIO = 500 V, TA = 25°C >1012 Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C >1011
VIO = 500 V at TS = 150°C >109
Pollution degree 2
Climatic category 40/125/21
UL 1577
VISO Withstand isolation voltage for UCC2155x VTEST = VISO, t = 60 s (qualification), VTEST = 1.2 × VISO, t = 1 s (100% production) 3000 VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed-circuit board are used to help increase these specifications.
(2) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(3) Apparent charge is electrical discharge caused by a partial discharge (pd).
(4) All pins on each side of the barrier tied together creating a two-pin device.
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