ZHCSGY8B October   2017  – July 2018 UCC21520-Q1

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     功能方框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety-Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Pulse Width Distortion
    2. 7.2 Rising and Falling Time
    3. 7.3 Input and Disable Response Time
    4. 7.4 Programable Dead Time
    5. 7.5 Power-up UVLO Delay to OUTPUT
    6. 7.6 CMTI Testing
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Diode Structure in the UCC21520-Q1
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Pin
      2. 8.4.2 Programmable Dead Time (DT) Pin
        1. 8.4.2.1 Tying the DT Pin to VCC
        2. 8.4.2.2 DT Pin Left Open or Connected to a Programming Resistor between DT and GND Pins
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing INA/INB Input Filter
        2. 9.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 9.2.2.3 Gate Driver Output Resistor
        4. 9.2.2.4 Estimate Gate Driver Power Loss
        5. 9.2.2.5 Estimating Junction Temperature
        6. 9.2.2.6 Selecting VCCI, VDDA/B Capacitor
          1. 9.2.2.6.1 Selecting a VCCI Capacitor
          2. 9.2.2.6.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 9.2.2.6.3 Select a VDDB Capacitor
        7. 9.2.2.7 Dead Time Setting Guidelines
        8. 9.2.2.8 Application Circuits with Output Stage Negative Bias
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 认证
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.9 Electrical Characteristics

VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TA = –40°C to +125°C, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IVCCI VCCI quiescent current VINA = 0 V, VINB = 0 V 1.5 2.0 mA
IVDDA,
IVDDB 		VDDA and VDDB quiescent current VINA = 0 V, VINB = 0 V 1.0 1.8 mA
IVCCI VCCI operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.0 mA
IVDDA,
IVDDB 		VDDA and VDDB operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.5 mA
VCCI UVLO THRESHOLDS
VVCCI_ON Rising threshold 2.55 2.7 2.85 V
VVCCI_OFF Falling threshold VCCI_OFF 2.35 2.5 2.65 V
VVCCI_HYS Threshold hysteresis 0.2 V
UCC21520A-Q1 VDD UVLO THRESHOLDS (5-V UVLO Version)
VVDDA_ON,
VVDDB_ON 		Rising threshold VDDA_ON, VDDB_ON 5.7 6.0 6.3 V
VVDDA_OFF,
VVDDB_OFF 		Falling threshold VDDA_OFF, VDDB_OFF 5.4 5.7 6 V
VVDDA_HYS,
VVDDB_HYS 		Threshold hysteresis 0.3 V
UCC21520-Q1 VDD UVLO THRESHOLDS (8-V UVLO Version)
VVDDA_ON,
VVDDB_ON 		Rising threshold VDDA_ON, VDDB_ON 8.3 8.7 9.2 V
VVDDA_OFF,
VVDDB_OFF 		Falling threshold VDDA_OFF, VDDB_OFF 7.8 8.2 8.7 V
VVDDA_HYS,
VVDDB_HYS 		Threshold hysteresis 0.5 V
INA, INB AND DISABLE
VINAH, VINBH, VDISH Input high voltage 1.6 1.8 2 V
VINAL, VINBL, VDISL Input low voltage 0.8 1 1.2 V
VINA_HYS, VINB_HYS, VDIS_HYS Input hysteresis 0.8 V
VINA, VINB Negative transient, ref to GND, 50 ns pulse Not production tested, bench test only –5 V
OUTPUT
IOA+, IOB+ Peak output source current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 4 A
IOA-, IOB- Peak output sink current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 6 A
ROHA, ROHB Output resistance at high state IOUT = –10 mA, TA = 25°C, ROHA, ROHBdo not represent drive pull-up performance. See tRISE in Switching Characteristics and Output Stage for details. 5 Ω
ROLA, ROLB Output resistance at low state IOUT = 10 mA, TA = 25°C 0.55 Ω
VOHA, VOHB Output voltage at high state VVDDA, VVDDB = 12 V, IOUT = –10 mA, TA = 25°C 11.95 V
VOLA, VOLB Output voltage at low state VVDDA, VVDDB = 12 V, IOUT = 10 mA, TA = 25°C 5.5 mV
DEADTIME AND OVERLAP PROGRAMMING
Dead time Pull DT pin to VCCI Overlap determined by INA INB -
DT pin is left open, min spec characterized only, tested for outliers 0 8 15 ns
RDT = 20 kΩ 160 200 240 ns
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