ZHCSGY8B October   2017  – July 2018 UCC21520-Q1

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     功能方框图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety-Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Propagation Delay and Pulse Width Distortion
    2. 7.2 Rising and Falling Time
    3. 7.3 Input and Disable Response Time
    4. 7.4 Programable Dead Time
    5. 7.5 Power-up UVLO Delay to OUTPUT
    6. 7.6 CMTI Testing
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Diode Structure in the UCC21520-Q1
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Pin
      2. 8.4.2 Programmable Dead Time (DT) Pin
        1. 8.4.2.1 Tying the DT Pin to VCC
        2. 8.4.2.2 DT Pin Left Open or Connected to a Programming Resistor between DT and GND Pins
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing INA/INB Input Filter
        2. 9.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 9.2.2.3 Gate Driver Output Resistor
        4. 9.2.2.4 Estimate Gate Driver Power Loss
        5. 9.2.2.5 Estimating Junction Temperature
        6. 9.2.2.6 Selecting VCCI, VDDA/B Capacitor
          1. 9.2.2.6.1 Selecting a VCCI Capacitor
          2. 9.2.2.6.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 9.2.2.6.3 Select a VDDB Capacitor
        7. 9.2.2.7 Dead Time Setting Guidelines
        8. 9.2.2.8 Application Circuits with Output Stage Negative Bias
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 认证
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Application Curves

Figure 42 and Figure 43 shows the bench test waveforms for the design example shown in Figure 38 under these conditions: VCC = 5 V, VDD = 20 V, fSW = 100 kHz, VDC-Link = 0 V.

Channel 1 (Yellow): UCC21520-Q1 INA pin signal.

Channel 2 (Blue): UCC21520-Q1 INB pin signal.

Channel 3 (Pink): Gate-source signal on the high side power transistor.

Channel 4 (Green): Gate-source signal on the low side power transistor.

In Figure 42, INA and INB are sent complimentary 3.3-V, 50% duty-cycle signals. The gate drive signals on the power transistor have a 250-ns dead time, shown in the measurement section of Figure 42. The dead-time matching is less than 1 ns with the 250-ns dead-time setting.

Figure 43 shows a zoomed-in version of the waveform of Figure 42, with measurements for propagation delay and rising/falling time. Cursors are also used to measure dead time. Importantly, the output waveform is measured between the power transistors’ gate and source pins, and is not measured directly from the driver OUTA and OUTB pins. Due to the split on and off resistors (Ron,Roff) and different sink and source currents, different rising (16 ns) and falling time (9 ns) are observed in Figure 43.

UCC21520-Q1 UCC21520A-Q1 EX2.gif
Figure 42. Bench Test Waveform for INA/B and OUTA/B
UCC21520-Q1 UCC21520A-Q1 EX3.gif
Figure 43. Zoomed-In bench-test waveform