ZHCSJR4C january 2019 – may 2023 UCC21710-Q1
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Power Ratings
- 6.6 Insulation Specifications
- 6.7 Safety-Related Certifications
- 6.8 Safety Limiting Values
- 6.9 Electrical Characteristics
- 6.10 Switching Characteristics
- 6.11 Insulation Characteristics Curves
- 6.12 Typical Characteristics
- 7 Parameter Measurement Information
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 Power Supply
- 8.3.2 Driver Stage
- 8.3.3 VCC and VDD Undervoltage Lockout (UVLO)
- 8.3.4 Active Pulldown
- 8.3.5 Short Circuit Clamping
- 8.3.6 Internal Active Miller Clamp
- 8.3.7 Overcurrent and Short Circuit Protection
- 8.3.8 Soft Turn-off
- 8.3.9 Fault ( FLT, Reset and Enable ( RST/EN)
- 8.3.10 Isolated Analog to PWM Signal Function
- 8.4 Device Functional Modes
-
9 Applications and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Input filters for IN+, IN- and RST/EN
- 9.2.2.2 PWM Interlock of IN+ and IN-
- 9.2.2.3 FLT, RDY and RST/EN Pin Circuitry
- 9.2.2.4 RST/EN Pin Control
- 9.2.2.5 Turn on and turn off gate resistors
- 9.2.2.6 Overcurrent and Short Circuit Protection
- 9.2.2.7 Isolated Analog Signal Sensing
- 9.2.2.8 Higher Output Current Using an External Current Buffer
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
9.2.2.7 Isolated Analog Signal Sensing
The isolated analog signal sensing feature provides a simple isolated channel for the isolated temperature detection, voltage sensing and etc. One typical application of this function is the temperature monitor of the power semiconductor. Thermal diodes or temperature sensing resistors are integrated in the SiC MOSFET or IGBT module close to the dies to monitor the junction temperature. UCC21710-Q1 has an internal 200uA current source with ±3% accuracy across temperature, which can forward bias the thermal diodes or create a voltage drop on the temperature sensing resistors. The sensed voltage from the AIN pin is passed through the isolation barrier to the input side and transformed to a PWM signal. The duty cycle of the PWM changes linearly from 10% to 88% when the AIN voltage changes from 4.5V to 0.6V and can be represented using Equation 12.
