ZHCSLZ9C August   2020  – January 2024 UCC21732

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Regular Turn-OFF
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 External Active Miller Clamp
    4. 6.4 Under Voltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 OC (Over Current) Protection
      1. 6.5.1 OC Protection with 2-Level Turn-OFF
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  External Active Miller Clamp
      7. 7.3.7  Overcurrent and Short Circuit Protection
      8. 7.3.8  2-Level Turn-Off
      9. 7.3.9  Fault ( FLT, Reset and Enable ( RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filters for IN+, IN- and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 External Active Miller Clamp
        7. 8.2.2.7 Overcurrent and Short Circuit Protection
          1. 8.2.2.7.1 Protection Based on Power Modules with Integrated SenseFET
          2. 8.2.2.7.2 Protection Based on Desaturation Circuit
          3. 8.2.2.7.3 Protection Based on Shunt Resistor in Power Loop
        8. 8.2.2.8 Isolated Analog Signal Sensing
          1. 8.2.2.8.1 Isolated Temperature Sensing
          2. 8.2.2.8.2 Isolated DC Bus Voltage Sensing
        9. 8.2.2.9 Higher Output Current Using an External Current Buffer
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.9 Electrical Characteristics

VCC=3.3V or 5.0V, 1uF capacitor from VCC to GND, VDD–COM=20V, 18V or 15V, COM–VEE =0V, 5V, 8V or 15V, CL=100pF, –40°C<TJ<150°C (unless otherwise noted)(1)(2).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC UVLO THRESHOLD AND DELAY
VVCC_ON VCC–GND 2.55 2.7 2.85 V
VVCC_OFF 2.35 2.5 2.65
VVCC_HYS 0.2
tVCCFIL VCC UVLO Deglitch time 10 µs
tVCC+ to OUT VCC UVLO on delay to output high IN+ = VCC, IN– = GND 28 37.8 50
tVCC– to OUT VCC UVLO off delay to output low 5 10 15
tVCC+ to RDY VCC UVLO on delay to RDY high RST/EN = VCC 30 37.8 50
tVCC– to RDY VCC UVLO off delay to RDY low 5 10 15
VDD UVLO THRESHOLD AND DELAY
VVDD_ON VDD–COM 10.5 12.0 12.8 V
VVDD_OFF 9.9 10.7 11.8
VVDD_HYS 0.8
tVDDFIL VDD UVLO Deglitch time 5 µs
tVDD+ to OUT VDD UVLO on delay to output high IN+ = VCC, IN– = GND 2 5 8
tVDD– to OUT VDD UVLO off delay to output low 5 10
tVDD+ to RDY VDD UVLO on delay to RDY high RST/EN = FLT=High 10 15
tVDD– to RDY VDD UVLO off delay to RDY low 10 15
VCC, VDD QUIESCENT CURRENT
IVCCQ VCC quiescent current OUT(H) = High, fS = 0Hz, AIN=2V 2.5 3 4 mA
OUT(L) = Low, fS = 0Hz, AIN=2V 1.45 2 2.75
IVDDQ VDD quiescent current OUT(H) = High, fS = 0Hz, AIN=2V 3.6 4 5.9 mA
OUT(L) = Low, fS = 0Hz, AIN=2V 3.1 3.7 5.3
LOGIC INPUTS — IN+, IN– and RST/EN
VINH Input high threshold VCC=3.3V 1.85 2.31 V
VINL Input low threshold VCC=3.3V 0.99 1.52 V
VINHYS Input threshold hysteresis VCC=3.3V 0.33 V
IIH Input high level input leakage current VIN = VCC 90 µA
IIL Input low level input leakage VIN = GND –90 µA
RIND Input pins pull down resistance see Section 7 for more information 28.5 55 113 kΩ
RINU Input pins pull up resistance see Section 7 for more information 28.5 55 113
TINFIL IN+, IN– and RST/EN deglitch (ON and OFF) filter time fS = 50kHz 28 40 50 ns
TRSTFIL Deglitch filter time to reset /FLT 400 650 800 ns
GATE DRIVER STAGE
IOUT, IOUTH Peak source current CL=0.18µF, fS=1kHz 10 A
IOUT, IOUTL Peak sink current 10 A
ROUTH(3) Output pull-up resistance IOUT = –0.1A 1.5 2.5 4.9 Ω
ROUTL Output pull-down resistance IOUT = 0.1A 0.1 0.3 0.7 Ω
VOUTH High level output voltage IOUT = –0.2A, VDD=18V 17.5 V
VOUTL Low level output voltage IOUT = 0.2A 60 mV
ACTIVE PULLDOWN
VOUTPD Output active pull down on OUTL IOUTL or IOUT = 0.1×IOUT(L)(tpy), VDD=OPEN, VEE=COM 1.5 2.0 2.5 V
EXTERNAL MILLER CLAMP
VCLMPTH Miller clamp threshold voltage Reference to VEE 1.5 2.0 2.5 V
VCLMPE Output high voltage Reference to VEE 4.8 5 5.3 V
ICLMPEH Peak source current CCLMPE = 10nF ; ensured by design 0.25 A
ICLMPEL Peak sink current CCLMPE = 10nF 0.12 0.25 0.37 A
tCLMPER Rising time CCLMPE = 330pF 20 40 ns
tDCLMPE Miller clamp ON delay time 40 70 ns
SHORT CIRCUIT CLAMPING
VCLP-OUT(H) VOUT–VDD, VOUTH–VDD OUT = Low, IOUT(H) = 500mA, tCLP=10us 0.9 V
VCLP-OUT(L) VOUT–VDD, VOUTL–VDD OUT = High, IOUT(L) = 500mA, tCLP=10us 1.8 V
OC PROTECTION
IDCHG OC pull down current when VOC = 1V 40 mA
VOCTH Detection Threshold 0.63 0.7 0.77 V
VOCL Voltage when OUT(L) = LOW, Reference to COM IOC = 5mA 0.13 V
tOCFIL OC fault deglitch filter 95 120 180 ns
tOCOFF OC propagation delay to OUT(L) 90% 150 270 400 ns
tOCFLT OC to FLT low delay 300 530 750 ns
2-LEVEL TURNOFF (Triggered by OC)
V2LOFF 2LOFF voltage threshold 8.3 9.0 10.0 V
t2LOFF 2LOFF voltage duration 500 700 1000 ns
ITL1 High to 2-Level transition sink current 900 mA
ITL3 Soft turn-off current on fault conditions VDD-VEE=20V, VOUTL-COM=8V 500 900 1200 mA
ISOLATED TEMPERATURE SENSE AND MONITOR (AIN–APWM)
VAIN Analog sensing voltage range 0.6 4.5 V
IAIN Internal current source
 VAIN=2.5V, -40°C< TJ< 150°C
 196 203 209 µA
fAPWM APWM output frequency VAIN=2.5V 360 400 440 kHz
BWAIN AIN–APWM bandwidth 10 kHz
DAPWM APWM Dutycycle VAIN = 0.6V 85 88 91 %
VAIN = 2.5V 47 50 53
VAIN = 4.5V 7 10 13
FLT AND RDY REPORTING
tRDYHLD VDD UVLO RDY low minimum holding time 0.55 1 ms
tFLTMUTE Output mute time on fault Reset fault through RST/EN 0.55 1 ms
RODON Open drain output on resistance IODON = 5mA 30 Ω
VODL Open drain low output voltage IODON = 5mA 0.3 V
COMMON MODE TRANSIENT IMMUNITY
CMTI Common-mode transient immunity VCM = 1500 V 150 V/ns
(1) Current are positive into and negative out of the specified terminal.
(2) All voltages are referenced to COM unless otherwise notified.
(3) For internal PMOS only. Refer to Section 7.3 for effective pull-up resistance.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |