SLUSEM9A September   2022  – June 2024 UCC21755-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Non-Inverting and Inverting Propagation Delay
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal On-Chip Active Miller Clamp
    4. 6.4 Undervoltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 Desaturation (DESAT) Protection
      1. 6.5.1 DESAT Protection with Soft Turn-OFF
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Desaturation (DESAT) Protection
      8. 7.3.8  Soft Turn-Off
      9. 7.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filters for IN+, IN-, and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 Overcurrent and Short Circuit Protection
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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订购信息

Layout Guidelines

Due to the strong drive strength of the device, careful considerations must be taken in PCB design. Below are some key points:

  • The driver should be placed as close as possible to the power semiconductor to reduce the parasitic inductance of the gate loop on the PCB traces.
  • The decoupling capacitors of the input and output power supplies should be placed as close as possible to the power supply pins. The peak current generated at each switching transient can cause high dI/dt and voltage spike on the parasitic inductance of PCB traces.
  • The driver COM pin should be connected to the Kelvin connection of SiC MOSFET source or IGBT emitter. If the power device does not have a split Kelvin source or emitter, the COM pin should be connected as close as possible to the source or emitter terminal of the power device package to separate the gate loop from the high power switching loop.
  • Use a ground plane on the input side to shield the input signals. The input signals can be distorted by the high frequency noise generated by the output side switching transients. The ground plane provides a low-inductance filter for the return current flow.
  • If the gate driver is used for the low side switch which the COM pin connected to the dc bus negative, use the ground plane on the output side to shield the output signals from the noise generated by the switch node; if the gate driver is used for the high side switch, which the COM pin is connected to the switch node, ground plane should not overlap with any low-side circuitry, and it should be routed independently from the source/emitter power path.
  • If ground plane is not used on the output side, separate the return path of the DESAT and AIN ground loop from the gate loop ground which has large peak source and sink current.
  • No PCB trace or copper is allowed under the gate driver. A PCB cutout is recommended to avoid any noise coupling between the input and output side which can contaminate the isolation barrier.