SLUSEM9A September   2022  – June 2024 UCC21755-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Non-Inverting and Inverting Propagation Delay
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal On-Chip Active Miller Clamp
    4. 6.4 Undervoltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 Desaturation (DESAT) Protection
      1. 6.5.1 DESAT Protection with Soft Turn-OFF
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Desaturation (DESAT) Protection
      8. 7.3.8  Soft Turn-Off
      9. 7.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filters for IN+, IN-, and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 Overcurrent and Short Circuit Protection
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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Input Filters for IN+, IN-, and RST/EN

In the applications of traction inverter or motor drive, the power semiconductors are in hard switching mode. With the strong drive strength of the device, the dV/dt can be high, especially for SiC MOSFET. Noise cannot only be coupled to the gate voltage due to the parasitic inductance, but also to the input side as the non-ideal PCB layout and coupled capacitance.

The device features a 40-ns internal deglitch filter to IN+, IN- and RST/EN pin. Any signal less than 40 ns can be filtered out from the input pins. For noisy systems, external low-pass filter can be added externally to the input pins. Adding low-pass filters to IN+, IN- and RST/EN pins can effectively increase the noise immunity and increase the signal integrity. When not in use, the IN+, IN- and RST/EN pins should not be floating. IN- should be tied to GND if only IN+ is used for noninverting input to output configuration. The purpose of the low-pass filter is to filter out the high frequency noise generated by the layout parasitics. While choosing the low-pass filter resistors and capacitors, both the noise immunity effect and delay time should be considered according to the system requirements.