ZHCSLM8B August   2020  – February 2024 UCC21759-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Non-Inverting and Inverting Propagation Delay
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal On-chip Active Miller Clamp
    4. 6.4 Under Voltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 Desaturation (DESAT) Protection
      1. 6.5.1 DESAT Protection with Soft Turn-OFF
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Desaturation (DESAT) Protection
      8. 7.3.8  Soft Turn-off
      9. 7.3.9  Fault ( FLT, Reset and Enable ( RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input filters for IN+, IN- and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 Desaturation (DESAT) Protection
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 第三方米6体育平台手机版_好二三四免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2.6 Desaturation (DESAT) Protection

A standard desaturation circuit can be applied to the DESAT pin. If the voltage of the DESAT pin is higher than the threshold VDESAT, the soft turn-off is initiated. A fault will be reported to the input side to DSP/MCU. The output is held to LOW after the fault is detected, and can only be reset by the RST/EN pin. The state-of-art overcurrent and short circuit detection time helps to ensure a short shutdown time for SiC MOSFET and IGBT.

If DESAT pin is not in use, it must be tied to COM to avoid overcurrent fault false triggering.

  • Fast reverse recovery high voltage diode is recommended in the desaturation circuit. A resistor is recommended in series with the high voltage diode to limit the inrush current. Multiple high voltage diodes can be placed in series to reduce the DESAT detection voltage as seen by the IGBT or SiC MOSFET based on the forward voltage drop.
  • A Schottky diode is recommended from COM to DESAT to prevent driver damage caused by negative voltage.
  • A Zener diode is recommended from COM to DESAT to prevent driver damage caused by positive voltage.
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