ZHCSDP7C May   2015  – July 2024 UCC27201A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 UVLO (Under Voltage Lockout)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 第三方米6体育平台手机版_好二三四免责声明
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.5 Electrical Characteristics

VDD = VHB =12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = –40°C to +150°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD quiescent current VLI = VHI = 0 V 0.11 0.8 mA
IDDO VDD operating current f = 500 kHz, CLOAD = 0 1 3 mA
IHB Boot voltage quiescent current VLI = VHI = 0 V 0.065 0.8 mA
IHBO Boot voltage operating current f = 500 kHz, CLOAD = 0 0.9 3 mA
IHBS HB to VSS quiescent current VHS = VHB = 105 V 0.0005 1 μA
IHBSO HB to VSS operating current f = 500 kHz, CLOAD = 0 0.03 mA
INPUT
VHIT Input voltage high threshold 1.9 2.3 2.7 V
VLIT Input voltage low threshold 1.3 1.6 1.9 V
VIHYS Input voltage hysteresis 0.7 V
RIN Input pulldown resistance VIN = 3V 68 kΩ
UNDERVOLTAGE PROTECTION (UVLO)
VDDR VDD rising threshold 6.2 7.1 7.8 V
VDDHYS VDD threshold hysteresis 0.5 V
VHBR VHB rising threshold 5.8 6.7 7.2 V
VHBHYS VHB threshold hysteresis 0.4 V
BOOTSTRAP DIODE
VF Low-current forward voltage I VDD - HB = 100 μA 0.65 0.85 V
VFI High-current forward voltage I VDD - HB = 100 mA 0.85 1.1 V
RD Dynamic resistance, ΔVF/ΔI I VDD - HB = 120 mA and 100 mA 0.65 1 Ω
LO GATE DRIVER
VLOL Low level output voltage ILO = 100 mA 0.1 0.4 V
VLOH High level output voltage ILO = -100 mA, VLOH = VDD – VLO 0.13 0.42 V
Peak pullup current(1) VLO = 0 V 3 A
Peak pulldown current(1) VLO = 12 V 3 A
HO GATE DRIVER
VHOL Low level output voltage IHO = 100 mA 0.1 0.4 V
VHOH High level output voltage IHO = –100 mA, VHOH = VHB- VHO 0.13 0.42 V
Peak pullup current(1) VHO = 0 V 3 A
Peak pulldown current(1) VHO = 12 V 3 A
(1) Parameter not tested in production.
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