米6体育平台手机版

SLUSCO1B June 2017 – July 2024 UCC27212

PRODUCTION DATA

5.6 Switching Characteristics

V_DD = V_HB = 12 V, V_HS = V_SS = 0 V, No load on LO or HO, T_A = T_J = –40°C to +150°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
PROPAGATION DELAYS
t_DLFF	VLI falling to VLO falling	C_LOAD = 0 pF, from V_LITof LI to 90% of LO falling	10	19	30	ns
t_DHFF	VHI falling to VHO falling	C_LOAD = 0 pF, from V_LITof HI to 90% of HO falling	10	19	30	ns
t_DLRR	VLI rising to VLO rising	C_LOAD = 0 pF, from V_HITof LI to 10% of LO rising	10	20	42	ns
t_DHRR	VHI rising to VHO rising	C_LOAD = 0 pF, C_LOAD = 0 pF, from V_HITof HI to 10% of HO rising	10	20	42	ns
DELAY MATCHING
t_MON	Delay from HO off to LO on	T_J = 25°C		4	9.5	ns
t_MON	Delay from HO off to LO on	T_J = -40°C to 150°C		4	17	ns
t_MOFF	Delay from LO off to HO on	T_J = 25°C		4	9.5	ns
t_MOFF	Delay from LO off to HO on	T_J = -40°C to 150°C		4	17	ns
OUTPUT RISE AND FALL TIME
t_{R_LO}	LO rise time	C_LOAD = 1000 pF, from 10% to 90%		7.2		ns
t_{R_HO}	HO rise time	C_LOAD = 1000 pF, from 10% to 90%		7.2		ns
t_{F_LO}	LO fall time	C_LOAD = 1000 pF, from 10% to 90%		5.5		ns
t_{F_HO}	HO fall time	C_LOAD = 1000 pF, from 10% to 90%		5.5		ns
t_{R_LO_p1}	LO rise time (3 V to 9 V)	C_LOAD = 0.1 μF, (3V to 9V)		0.27	0.6	μs
t_{R_HO_p1}	HO rise time (3 V to 9 V)	C_LOAD = 0.1 μF, (3V to 9V)		0.27	0.6	μs
t_{F_LO_p1}	LO fall time (9 V to 3 V)	C_LOAD = 0.1 μF, (9V to 3V)		0.16	0.4	μs
t_{F_HO_p1}	HO fall time (9 V to 3 V)	C_LOAD = 0.1 μF, (9V to 3V)		0.16	0.4	μs
MISCELLANEOUS
t_{IN_PW}	Minimum input pulse width that changes the output LO				40	ns
t_{IN_PW}	Minimum input pulse width that changes the output HO				40	ns
t_{OFF_BSD}	Bootstrap diode turnoff time⁽¹⁾⁽²⁾	I_F = 20 mA, I_REV = 0.5 A⁽³⁾		20		ns

(1) Parameter not tested in production.

(2) Typical values for T_A= 25°C.

(3) I_F: Forward current applied to bootstrap diode, I_REV: Reverse current applied to bootstrap diode.