ZHCSGD6 July 2017 UCC27212A-Q1
PRODUCTION DATA.
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
2 | HB | P | High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022 µF to 0.1 µF. The capacitor value is dependant on the gate charge of the high-side MOSFET and must also be selected based on speed and ripple criteria. |
5 | HI | I | High-side input.(1) |
3 | HO | O | High-side output. Connect to the gate of the high-side power MOSFET. |
4 | HS | P | High-side source connection. Connect to source of high-side power MOSFET. Connect the negative side of bootstrap capacitor to this pin. |
6 | LI | I | Low-side input.(1) |
8 | LO | O | Low-side output. Connect to the gate of the low-side power MOSFET. |
1 | VDD | P | Positive supply to the lower-gate driver. De-couple this pin to VSS (GND). Typical decoupling capacitor range is 0.22 µF to 4.7 µF (See (2)). |
7 | VSS | — | Negative supply terminal for the device that is generally grounded. |
Pad | Thermal pad(3) | — | Electrically referenced to VSS (GND). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance. |