米6体育平台手机版

ZHCSL22B March 2020 – May 2022 UCC27284-Q1

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K

散热焊盘机械数据 (封装 | 引脚)

订购信息

zhcsl22b_oa

6.5 Electrical Characteristics

V_DD = V_HB = 12 V, V_HS = V_SS = 0 V, No load on LO or HO, T_J = –40°C to +150°C, (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
I_DD	VDD quiescent current	V_LI = V_HI = 0		0.3	0.4	mA
I_DDO	VDD operating current	f = 500 kHz, C_LOAD = 0		2.2	4.5	mA
I_HB	HB quiescent current	V_LI = V_HI = 0 V		0.2	0.4	mA
I_HBO	HB operating current	f = 500 kHz, C_LOAD = 0		2.5	4	mA
I_HBS	HB to VSS quiescent current	V_HS = V_HB = 100 V		5.0	50	μA
I_HBSO	HB to VSS operating current⁽¹⁾	f = 500 kHz, C_LOAD = 0		0.1		mA
INPUT
V_HIT	Input rising threshold		1.9	2.1	2.4	V
V_LIT	Input falling threshold		0.9	1.1	1.3	V
V_IHYS	Input voltage Hysteresis			1.0		V
R_IN	Input pulldown resistance		100	250	350	kΩ
UNDERVOLTAGE LOCKOUT PROTECTION (UVLO)
V_DDR	VDD rising threshold		4.7	5.0	5.4	V
V_DDF	VDD falling threshold		4.2	4.5	4.9	V
V_DDHYS	VDD threshold hysteresis			0.5		V
V_HBR	HB rising threshold with respect to HS pin		3.3	3.7	4.7	V
V_HBF	HB falling threshold with respect to HS pin		3.0	3.3	4.4	V
V_HBHYS	HB threshold hysteresis			0.3		V
BOOTSTRAP DIODE
V_F	Low-current forward voltage	I_VDD-HB = 100 μA		0.65	0.85	V
V_FI	High-current forward voltage	I_VDD-HB = 80 mA		0.85	1.0	V
R_D	Dynamic resistance, ΔV_F/ΔI	I_VDD-HB = 100 mA and 80 mA		1.5	2.5	Ω
LO GATE DRIVER
V_LOL	Low level output voltage	I_LO = 100 mA		0.085	0.4	V
V_LOH	High level output voltage	I_LO = -100 mA, V_LOH = V_DD – V_LO		0.13	0.42	V
	Peak pullup current ⁽¹⁾	V_LO = 0 V		3.0		A
	Peak pulldown current ⁽¹⁾	V_LO = 12 V		3.0		A
HO GATE DRIVER
V_HOL	Low level output voltage	I_HO = 100 mA		0.1	0.4	V
V_HOH	High level output voltage	I_HO = –100 mA, V_HOH = V_HB- V_HO		0.12	0.42	V
	Peak pullup current ⁽¹⁾	V_HO = 0 V		3.0		A
	Peak pulldown current ⁽¹⁾	V_HO = 12 V		3.0		A

(1) Parameter not tested in production