ZHCSQI7B april   2023  – august 2023 UCC27301A-Q1

ADVANCE INFORMATION  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. 说明(续)
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stages and Cross-Conduction Protection
      2. 8.3.2 Enable
      3. 8.3.3 Undervoltage Lockout (UVLO)
      4. 8.3.4 Level Shifter
      5. 8.3.5 Boot Diode
      6. 8.3.6 Output Stages
      7. 8.3.7 Negative Voltage Transients
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Threshold Type
        2. 9.2.2.2 VDD Bias Supply Voltage
        3. 9.2.2.3 Peak Source and Sink Currents
        4. 9.2.2.4 Propagation Delay
        5. 9.2.2.5 Power Dissipation
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
      1.      54
    2. 13.2 Tape and Reel Information
    3. 13.3 Mechanical Data

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRC|10
  • DDA|8
散热焊盘机械数据 (封装 | 引脚)

Power Dissipation

Power dissipation of the gate driver has two portions as shown in Equation 1.

Equation 1. PDISS = PDC + PSW

Use Equation 2 to calculate the DC portion of the power dissipation (PDC).

Equation 2. PDC = IQ × VDD

where

  • IQ is the quiescent current for the driver.

The quiescent current is the current consumed by the device to bias all internal circuits such as input stage, reference voltage, logic circuits, protections, and also any current associated with switching of internal devices when the driver output changes state (such as charging and discharging of parasitic capacitances, parasitic shoot-through, and so forth). The UCC27301A-Q1 features very low quiescent currents and contains internal logic to eliminate any shoot-through in the output driver stage. Thus the effect of the PDC on the total power dissipation within the gate driver can be safely assumed to be negligible. The power dissipated in the gate-driver package during switching (PSW) depends on the following factors:

  • Gate charge required of the power device (usually a function of the drive voltage VG, which is very close to input bias supply voltage VDD)
  • Switching frequency
  • Use of external gate resistors. When a driver device is tested with a discrete, capacitive load calculating the power that is required from the bias supply is fairly simple. The energy that must be transferred from the bias supply to charge the capacitor is given by Equation 3.
    Equation 3. EG = ½CLOAD × VDD2
    • where

    • CLOAD is load capacitor
    • VDD is bias voltage feeding the driver

There is an equal amount of energy dissipated when the capacitor is charged and when it is discharged. This leads to a total power loss given by Equation 4.

Equation 4. PG = CLOAD × VDD2 × fSW

where

  • fSW is the switching frequency

The switching load presented by a power MOSFET/IGBT is converted to an equivalent capacitance by examining the gate charge required to switch the device. This gate charge includes the effects of the input capacitance plus the added charge needed to swing the drain voltage of the power device as it switches between the ON and OFF states. Most manufacturers provide specifications of typical and maximum gate charge, in nC, to switch the device under specified conditions. Using the gate charge Qg, determine the power that must be dissipated when switching a capacitor which is calculated using the equation QG = CLOAD × VDD to provide Equation 5 for power.

Equation 5. PG = CLOAD × VDD2 × fSW = QG × VDD × fSW

This power PG is dissipated in the resistive elements of the circuit when the MOSFET/IGBT is being turned on and off. Half of the total power is dissipated when the load capacitor is charged during turnon, and the other half is dissipated when the load capacitor is discharged during turnoff. When no external gate resistor is employed between the driver and MOSFET/IGBT, this power is completely dissipated inside the driver package. With the use of external gate-drive resistors, the power dissipation is shared between the internal resistance of driver and external gate resistor.