米6体育平台手机版

ZHCSQI7B april 2023 – august 2023 UCC27301A-Q1

ADVANCE INFORMATION

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DRC|10
DDA|8

散热焊盘机械数据 (封装 | 引脚)

7.5 Electrical Characteristics

V_DD = V_HB =12 V, V_HS = V_SS = 0 V, No load on LO or HO, T_A = T_J = –40°C to +150°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
I_DD	VDD quiescent current	V_LI = V_HI = 0, V_EN = 3V	0.05	0.085	0.17	mA
I_DDO	VDD operating current	f = 500 kHz, C_LOAD = 0, V_EN = 3V	2.1	2.5	6.5	mA
I_HB	Boot voltage quiescent current	V_LI = V_HI = 0 V, V_EN = 3V	0.015	0.065	0.1	mA
I_HBO	Boot voltage operating current	f = 500 kHz, C_LOAD = 0, V_EN = 3V	1.5	2.5	5.1	mA
I_HBS	HB to VSS quiescent current	V_HS = V_HB = 105 V, V_EN = 3V		0.0005	1	μA
I_HBSO	HB to VSS operating current	f = 500 kHz, C_LOAD = 0, V_EN = 3V		0.07	1.2	mA
I_{DD_DIS}	Driver Current when EN pin is pulled low (Disabled)	UCC27301AQDRCRQ1 only, V_EN = 0		7		μA
INPUT
V_{HIT_HI}	Input voltage high threshold		1.7	2.3	2.55	V
V_{HIT_LI}	Input voltage high threshold		1.7	2.3	2.55	V
V_{LIT_HI}	Input voltage low threshold		1.2	1.6	1.9	V
V_{LIT_LI}	Input voltage low threshold		1.2	1.6	1.9	V
V_{IHYS HI}	Input voltage Hysteresis			0.7		V
V_{IHYS LI}	Input voltage Hysteresis			0.7		V
R_{IN_HI}	Input pulldown resistance	V_IN= 3V		68		kΩ
R_{IN_LI}	Input pulldown resistance	V_IN= 3V		68		kΩ
ENABLE
V_EN	Voltage threshold on EN pin to enable the driver	UCC27301AQDRCRQ1 only	1.7	2.3	2.55	V
V_DIS	Voltage threshold on EN pin to disable the driver	UCC27301AQDRCRQ1 only	1.2	1.6	1.9	V
V_ENHYS	Enable pin Hysteresis	UCC27301AQDRCRQ1 only		0.7		V
R_EN	EN pin internal pull-down resistance	UCC27301AQDRCRQ1 only, V_EN = 3V		80		kΩ
T_EN	EN pin response time	UCC27301AQDRCRQ1 only, V_EN = 3V		18	70	μs
T_DIS	EN pin response time	UCC27301AQDRCRQ1 only, V_EN = 0V		1.5	10	μs
UNDERVOLTAGE PROTECTION (UVLO)
V_DDR	VDD rising threshold		6.2	7	7.8	V
V_DDHYS	VDD threshold hysteresis			0.5		V
V_HBR	VHB rising threshold		5.6	6.7	7.9	V
V_HBHYS	VHB threshold hysteresis			1.1		V
BOOTSTRAP DIODE
V_F	Low-current forward voltage	I _{VDD - HB} = 100 μA		0.65	0.85	V
V_FI	High-current forward voltage	I _{VDD - HB} = 100 mA		0.9	1.05	V
R_D	Dynamic resistance, ΔVF/ΔI	I _{VDD - HB} = 160 mA and 180 mA	0.3	0.5	0.85	Ω
LO GATE DRIVER
V_LOL	Low level output voltage	I_LO = 100 mA		0.1	0.19	V
V_LOH	High level output voltage	I_LO = -100 mA, V_LOH = V_DD – V_LO		0.16	0.29	V
	Peak pullup current⁽¹⁾	V_LO = 0 V		3.7		A
	Peak pulldown current⁽¹⁾	V_LO = 12 V		4.5		A
HO GATE DRIVER
V_HOL	Low level output voltage	I_HO = 100 mA		0.1	0.19	V
V_HOH	High level output voltage	I_HO = –100 mA, V_HOH = V_HB- V_HO		0.16	0.29	V
	Peak pullup current⁽¹⁾	V_HO = 0 V		3.7		A
	Peak pulldown current⁽¹⁾	V_HO = 12 V		4.5		A

(1) Parameter not tested in production.