SLUSEY3 July   2024 UCC27311A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Enable
      3. 6.3.3 Undervoltage Lockout (UVLO)
      4. 6.3.4 Level Shifter
      5. 6.3.5 Boot Diode
      6. 6.3.6 Output Stages
      7. 6.3.7 Negative Voltage Transients
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
    2. 12.2 Tape and Reel Information
    3. 12.3 Mechanical Data

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRC|10
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.3.6 Output Stages

The output stages are the interface to the power MOSFETs in the power train. High slew rate, low resistance and high peak current capability of both output drivers allow for efficient switching of the power MOSFETs. The low-side output stage is referenced from VDD to VSS and the high side is referenced from VHB to VHS. The device output stages feature a pull-up structure which delivers the highest peak source current when it is most needed, during the Miller plateau region of the power switch turn on transition. The output pull-up and pull-down structure of the device is totem pole NMOS-PMOS structure.
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