ZHCS784D March 2012 – December 2014 UCC27516 , UCC27517
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Supply voltage | VDD | –0.3 | 20 | V | |
OUT voltage | DC | –0.3 | VDD + 0.3 | ||
Repetitive pulse less than 200 ns(5) | –2 | VDD + 0.3 | |||
Output continuous current | IOUT_DC (source/sink) | 0.3 | A | ||
Output pulsed current (0.5 µs) | IOUT_pulsed(source/sink) | 4 | |||
IN+, IN-(4) | –0.3 | 20 | V | ||
Operating virtual junction temperature, TJ | –40 | 150 | °C | ||
Lead temperature | Soldering, 10 sec. | 300 | |||
Reflow | 260 | ||||
Storage temperature, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | |
---|---|---|---|---|
Supply voltage range, VDD | 4.5 | 12 | 18 | V |
Operating junction temperature range | –40 | 140 | °C | |
Input voltage, IN+ and IN- | 0 | 18 | V |
THERMAL METRIC(1) | UCC27516 | UCC27517 | UNIT | |
---|---|---|---|---|
WSON | SOT-23 | |||
6 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 85.6 | 217.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 100.1 | 85.8 | |
RθJB | Junction-to-board thermal resistance | 58.6 | 44.0 | |
ψJT | Junction-to-top characterization parameter | 7.5 | 4.0 | |
ψJB | Junction-to-board characterization parameter | 58.7 | 43.2 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 23.7 | n/a |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
BIAS CURRENTS | |||||||
IDD(off) | Startup current | VDD = 3.4 V | IN+ = VDD, IN- = GND | 40 | 100 | 160 | µA |
IN+ = IN- = GND or IN+ = IN- = VDD | 25 | 75 | 145 | ||||
IN+ = GND, IN- = VDD | 20 | 60 | 115 | ||||
UNDERVOLTAGE LOCKOUT (UVLO) | |||||||
VON | Supply start threshold | TA = 25°C | 3.91 | 4.20 | 4.5 | V | |
TA = –40°C to 140°C | 3.70 | 4.20 | 4.65 | ||||
VOFF | Minimum operating voltage after supply start | 3.45 | 3.9 | 4.35 | |||
VDD_H | Supply voltage hysteresis | 0.2 | 0.3 | 0.5 | |||
INPUTS (IN+, IN-) | |||||||
VIN_H | Input signal high threshold | Output high for IN+ pin, Output low for IN- pin |
2.2 | 2.4 | V | ||
VIN_L | Input signal low threshold | Output low for IN+ pin, Output high for IN- pin |
1.0 | 1.2 | |||
VIN_HYS | Input signal hysteresis | 1.0 | |||||
SOURCE/SINK CURRENT | |||||||
ISRC/SNK | Source/sink peak current(1) | CLOAD = 0.22 µF, FSW = 1 kHz | ±4 | A | |||
OUTPUTS (OUT) | |||||||
VDD-VOH | High output voltage | VDD = 12 V IOUT = –10 mA |
50 | 90 | mV | ||
VDD = 4.5 V IOUT = –10 mA |
60 | 130 | |||||
VOL | Low output voltage | VDD = 12 IOUT = 10 mA |
5 | 10 | |||
VDD = 4.5 V IOUT = 10 mA |
6 | 12 | |||||
ROH | Output pullup resistance(2) | VDD = 12 V IOUT = –10 mA |
5.0 | 7.5 | Ω | ||
VDD = 4.5 V IOUT = –10 mA |
5.0 | 11.0 | |||||
ROL | Output pulldown resistance | VDD = 12 V IOUT = 10 mA |
0.5 | 1.0 | |||
VDD = 4.5 V IOUT = 10 mA |
0.6 | 1.2 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tR | Rise time(1) | VDD = 12 V CLOAD = 1.8 nF |
8 | 12 | ns | |
VDD = 4.5 V CLOAD = 1.8 nF |
16 | 22 | ||||
tF | Fall time(1) | VDD = 12 V CLOAD = 1.8 nF |
7 | 11 | ||
VDD=4.5V CLOAD = 1.8 nF |
7 | 11 | ||||
tD1 | IN+ to output propagation delay(1) | VDD = 12 V 5-V input pulse CLOAD = 1.8 nF |
4 | 13 | 23 | |
VDD = 4.5 V 5-V input pulse CLOAD = 1.8 nF |
4 | 15 | 26 | |||
tD2 | IN- to output propagation delay(1) | VDD = 12 V CLOAD = 1.8 nF |
4 | 13 | 23 | |
VDD = 4.5 V CLOAD = 1.8 nF |
4 | 19 | 30 |