ZHCSBJ1B August   2013  – August  2015 UCC27517A-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Switching Characteristics
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD and Undervoltage Lockout
      2. 9.3.2 Operating Supply Current
      3. 9.3.3 Input Stage
      4. 9.3.4 Enable Function
      5. 9.3.5 Output Stage
      6. 9.3.6 Low Propagation Delays
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Input-to-Output Logic
        2. 10.2.2.2 Input Threshold Type
        3. 10.2.2.3 VDD Bias Supply Voltage
        4. 10.2.2.4 Peak Source and Sink Currents
        5. 10.2.2.5 Enable and Disable Runction
        6. 10.2.2.6 Propagation Delay
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
    4. 12.4 Power Dissipation
  13. 13器件和文档支持
    1. 13.1 社区资源
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 Glossary
  14. 14机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|5
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
Supply voltage VDD –0.3 20 V
OUT voltage DC –0.3 VDD + 0.3 V
Repetitive pulse less than 200 ns(5) –2 VDD + 0.3 V
Output continuous current IOUT_DC (source/sink) 0.3 A
Output pulsed current (0.5 µs) IOUT_pulsed (source/sink) 4 A
Input voltage IN+, IN–(4) –6 20 V
Operating virtual junction temperature, TJ –40 150 °C
Storage temperature, TSTG –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See Packaging Section of the datasheet for thermal limitations and considerations of packages.
(3) These devices are sensitive to electrostatic discharge; follow proper device-handling procedures.
(4) Maximum voltage on input pins is not restricted by the voltage on the VDD pin.
(5) Values are verified by characterization on bench.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2500 V
Charged-device model (CDM), per AEC Q100-011 ±1500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage, VDD 4.5 12 18 V
Operating ambient temperature –40 140 °C
Input voltage, IN+ and IN– 0 18 V

8.4 Thermal Information

THERMAL METRIC(1) UCC27517A-Q1 UNIT
DBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 216 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 136.6 °C/W
RθJB Junction-to-board thermal resistance 43.4 °C/W
ψJT Junction-to-top characterization parameter 20.5 °C/W
ψJB Junction-to-board characterization parameter 42.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

VDD = 12 V, TA = –40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified terminal.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
BIAS CURRENTS
IDD(off) Startup current VDD = 3.4 V IN+ = VDD, IN– = GND 40 100 160 µA
IN+ = IN– = GND or
IN+ = IN– = VDD		 25 75 145
IN+ = GND, IN– = VDD 20 60 115
UNDER VOLTAGE LOCKOUT (UVLO)
VON Supply start threshold TA = 25°C 3.91 4.20 4.5 V
TA = –40°C to 140°C 3.70 4.20 4.65
VOFF Minimum operating voltage after supply start 3.45 3.9 4.35 V
VDD_H Supply voltage hysteresis 0.2 0.3 0.5 V
INPUTS (IN+, IN–)
VIN_H Input signal high threshold Output high for IN+ pin, Output low for IN– pin 2.2 2.4 V
VIN_L Input signal low threshold Output low for IN+ pin, Output high for IN– pin 1 1.2 V
VIN_HYS Input signal hysteresis 1 V
SOURCE/SINK CURRENT
ISRC/SNK Source/sink peak current(1) CLOAD = 0.22 µF, FSW = 1 kHz ±4 A
OUTPUTS (OUT)
VDD–VOH High output voltage VDD = 12 V, IOUT = –10 mA 50 90 mV
VDD = 4.5 V, IOUT = –10 mA 60 130
VOL Low output voltage VDD = 12, IOUT = 10 mA 5 10 mV
VDD = 4.5 V, IOUT = 10 mA 6 12
ROH Output pullup resistance(1) VDD = 12 V, IOUT = –10 mA 5 7.5 Ω
VDD = 4.5 V, IOUT = –10 mA 5 11
ROL Output pulldown resistance VDD = 12 V, IOUT = 10 mA 0.5 1 Ω
VDD = 4.5 V, IOUT = 10 mA 0.6 1.2
(1) Ensured by Design.
(2) See timing diagrams in Figure 1, Figure 2, Figure 3 and Figure 4.

8.6 Switching Characteristics

VDD = 12 V, TA = –40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified terminal.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING TIME
tR Rise time(2) VDD = 12 V, CLOAD = 1.8 nF 8 12 ns
VDD = 4.5 V, CLOAD = 1.8 nF 16 22
tF Fall time(2) VDD = 12 V, CLOAD = 1.8 nF 7 11 ns
VDD=4.5V, CLOAD = 1.8 nF 7 11
tD1 IN+ to output propagation delay(2) VDD = 12 V,
5-V input pulse, CLOAD = 1.8 nF		 4 13 23 ns
VDD = 4.5 V,
5-V input pulse, CLOAD = 1.8 nF		 4 15 26
tD2 IN– to output propagation delay(2) VDD = 12 V, CLOAD = 1.8 nF 4 13 23 ns
VDD = 4.5 V, CLOAD = 1.8 nF 4 19 30
(1) ROH represents on-resistance of P-Channel MOSFET in pullup structure of the output stage of the UCC27517A-Q1.
UCC27517A-Q1 time1_lusaw9.gif
PWM Input to IN+ pin (IN– pin tied to GND)
Figure 1. Non-Inverting Configuration
UCC27517A-Q1 time3_lusaw9.gif
Enable and disable signal applied to IN+ pin, PWM input to IN– pin
Figure 3. Enable and Disable Function Using IN+ Pin
UCC27517A-Q1 time2_lusaw9.gif
PWM input to IN– pin (IN+ pin tied to VDD)
Figure 2. Inverting Configuration
UCC27517A-Q1 time4_lusaw9.gif
Enable and disable signal applied to IN– pin, PWM input to IN+ pin
Figure 4. Enable and Disable Function Using IN– Pin

8.7 Typical Characteristics

UCC27517A-Q1 G001_Startup Current_lusaw9.png
Figure 5. Startup Current
vs Temperature
UCC27517A-Q1 G002_Operating Supply Current_lusaw9.png
Figure 7. Supply Current vs Temperature
(Output in DC On/Off condition)
UCC27517A-Q1 G014_Input_Threshold_lusaw9.png
Figure 9. Input Threshold vs Temperature
UCC27517A-Q1 fig11_lusay4.png
Figure 11. Output Pulldown Resistance vs Temperature
UCC27517A-Q1 G016_Fall Time_temp_lusaw9.png
Figure 13. Fall Time vs Temperature
UCC27517A-Q1 G010_IDD_frequency_lusaw9.png
Figure 15. Operating Supply Current vs Frequency
UCC27517A-Q1 G008_Rise Time_lusaw9.png
Figure 17. Rise Time vs Supply Voltage
UCC27517A-Q1 G013_Idd_500kHz_lusaw9.png
Figure 6. Operating Supply Current
vs Temperature (Output Switching)
UCC27517A-Q1 G003_UVLO_lusaw9.png
Figure 8. UVLO Threshold Voltage
vs Temperature
UCC27517A-Q1 G004_Pull-Up Resistance_lusaw9.png
Figure 10. Output Pullup Resistance vs Temperature
UCC27517A-Q1 G015_Rise Time_temp_lusaw9.png
Figure 12. Rise Time vs Temperature
UCC27517A-Q1 G006_Propagation Delay_lusaw9.png
Figure 14. Input to Output Propagation Delay vs Temperature
UCC27517A-Q1 G007_Propagation Delay_VDD_lusaw9.png
Figure 16. Propagation Delays vs Supply Voltage
UCC27517A-Q1 G009_Fall Time_lusaw9.png
Figure 18. Fall Time Vs Supply Voltage
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