SLUSAQ3H November   2011  – June 2024 UCC27523 , UCC27525 , UCC27526

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 VDD and Undervoltage Lockout
      2. 7.3.2 Operating Supply Current
      3. 7.3.3 Input Stage
      4. 7.3.4 Enable Function
      5. 7.3.5 Output Stage
      6. 7.3.6 Low Propagation Delays and Tightly Matched Outputs
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input-to-Output Logic
        2. 8.2.2.2 Enable and Disable Function
        3. 8.2.2.3 VDD Bias Supply Voltage
        4. 8.2.2.4 Propagation Delay
        5. 8.2.2.5 Drive Current and Power Dissipation
      3. 8.2.3 Application Curves
  10. Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

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Input Stage

The input pins of UCC2752x gate-driver devices are based on a TTL and CMOS compatible input-threshold logic that is independent of the VDD supply voltage. With typically high threshold = 2.1 V and typically low threshold = 1.2 V, the logic level thresholds are conveniently driven with PWM control signals derived from 3.3-V and 5-V digital power-controller devices. Wider hysteresis (typ 0.9 V) offers enhanced noise immunity compared to traditional TTL logic implementations, where the hysteresis is typically less than 0.5 V. UCC2752x devices also feature tight control of the input pin threshold voltage levels which eases system design considerations and ensures stable operation across temperature (refer to Figure 6-9). The very low input capacitance on these pins reduces loading and increases switching speed.

The UCC2752x devices feature an important safety feature wherein, whenever any of the input pins is in a floating condition, the output of the respective channel is held in the low state. This is achieved using VDD pullup resistors on all the Inverting inputs (INA, INB in UCC27523, INA in UCC27525 and INA–, INB– in UCC27526) or GND pulldown resistors on all the non-inverting input pins (INB in UCC27525 and INA+, INB+ in UCC27526), as shown in the device block diagrams.

While UCC27523/5 devices feature one input pin per channel, the UCC27526 features a dual input configuration with two input pins available to control the output state of each channel. With the UCC27526 device the user has the flexibility to drive each channel using either a non-inverting input pin (INx+) or an inverting input pin (INx–). The state of the output pin is dependent on the bias on both the INx+ and INx– pins (where x = A, B). Once an Input pin is chosen to drive a channel, the other input pin of that channel (the unused input pin) must be properly biased in order to enable the output of the channel. The unused input pin cannot remain in a floating condition because, as mentioned earlier, whenever any input pin is left in a floating condition, the output of that channel is disabled using the internal pullup or pulldown resistors for safety purposes. Alternatively, the unused input pin is used effectively to implement an enable/disable function, as explained below.

  • In order to drive the channel x (x = A or B) in a non-inverting configuration, apply the PWM control input signal to INx+ pin. In this case, the unused input pin, INx-, must be biased low (for example, tied to GND) in order to enable the output of this channel.
    • Alternately, the INx– pin can be used to implement the enable/disable function using an external logic signal. OUTx is disabled when INx- is biased High and OUTx is enabled when INX– is biased low.
  • In order to drive the channel x (x = A or B) in an Inverting configuration, apply the PWM control input signal to INX– pin. In this case, the unused input pin, INX+, must be biased high (for example, tied to VDD) in order to enable the output of the channel.
    • Alternately, the INX+ pin can be used to implement the enable/disable function using an external logic signal. OUTX is disabled when INX+ is biased low and OUTX is enabled when INX+ is biased high.
  • Finally, it is worth noting that the UCC27526 output pin can be driven into high state only when INx+ pin is biased high and INx- input is biased low.

Refer to the input/output logic truth table and typical application diagrams, (Figure 8-1, Figure 8-2, and Figure 8-2), for additional clarification.

The input stage of each driver is driven by a signal with a short rise or fall time. This condition is satisfied in typical power supply applications, where the input signals are provided by a PWM controller or logic gates with fast transition times (< 200 ns) with a slow changing input voltage, the output of the driver may switch repeatedly at a high frequency. While the wide hysteresis offered in UCC2752x definitely alleviates this concern over most other TTL input threshold devices, extra care is necessary in these implementations. If limiting the rise or fall times to the power device is the primary goal, then TI highly recommends an external resistance between the output of the driver and the power device. This external resistor has the additional benefit of reducing part of the gate-charge related power dissipation in the gate-driver device package and transferring it into the external resistor itself.