ZHCSAO3E June   2013  – December 2014 UCC27527 , UCC27528

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD and Undervoltage Lockout
      2. 8.3.2 Operating Supply Current
      3. 8.3.3 Input Stage
      4. 8.3.4 Enable Function
      5. 8.3.5 Output Stage
      6. 8.3.6 Low Propagation Delays and Tightly Matched Outputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input-to-Output Logic
        2. 9.2.2.2 Enable and Disable Function
        3. 9.2.2.3 VDD Bias Supply Voltage
        4. 9.2.2.4 Propagation Delay
        5. 9.2.2.5 Drive Current and Power Dissipation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 相关链接
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage range VDD –0.3 20.0 V
OUTA, OUTB voltage DC –0.3 VDD + 0.3
Repetitive pulse < 200 ns(4) –2.0 VDD + 0.3
Output continuous source/sink current IOUT_DC 0.3 A
Output pulsed source/sink current (0.5 µs) IOUT_pulsed 5
INA, INB, INA+, INA-, INB+, INB- voltage(3) –6.5 20 V
ENA, ENB voltage(3) –0.3 20
Operating virtual junction temperature, TJ range –40 150 °C
Lead temperature Soldering, 10 s 300
Reflow 260
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See Packaging Section of the datasheet for thermal limitations and considerations of packages.
(3) The maximum voltage on the Input and Enable pins is not restricted by the voltage on the VDD pin.
(4) Values are verified by characterization on bench.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –4000 4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –1000 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Supply voltage range, VDD 4.5 12 18 V
Operating junction temperature range –40 140 °C
Input voltage, INA, INB, INA+, INA-, INB+, INB- –5 18 V
Enable voltage, ENA and ENB 0 18

7.4 Thermal Information

THERMAL METRIC(1) UCC27527, UCC27528 UNIT
D DSD
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 128 46.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 77.7 50.7
RθJB Junction-to-board thermal resistance 68.5 21.8
ψJT Junction-to-top characterization parameter 20.7 1.1
ψJB Junction-to-board characterization parameter 68.0 22.0
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 9.0
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VDD = 12 V, TA = TJ = –40 °C to 140 °C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the specified terminal (unless otherwise noted,)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BIAS CURRENTS
IDD(off) Startup current VDD = 3.4 V,
INA=VDD,
INB=VDD		 UCC27528 55 125 225 μA
UCC27527 55 180 270
VDD = 3.4 V,
INA=GND,
INB=GND		 UCC27528 25 125 225
UCC27527 25 180 270
UNDERVOLTAGE LOCKOUT (UVLO)
VON Supply start threshold TJ = 25°C 3.91 4.20 4.50 V
TJ = -40°C to 140°C 3.75 4.20 4.65
VOFF Minimum operating voltage after supply start 3.60 3.90 4.40
VDD_H Supply voltage hysteresis 0.20 0.30 0.50
INPUTS (INA, INB, INA+, INA-, INB+, INB-), UCC2752X (D, DSD)
VIN_H Input signal high threshold Output high for non-inverting input pins
Output low for inverting input pins		 55 70 %VDD
VIN_L Input signal low threshold Output low for non-inverting input pins
Output high for inverting input pins		 30 38
VIN_HYS Input hysteresis 17
ENABLE (ENA, ENB) UCC2752X (D, DSD)
VEN_H Enable signal high threshold Output enabled 1.7 1.9 2.1 V
VEN_L Enable signal low threshold Output disabled 0.95 1.10 1.25
VEN_HYS Enable hysteresis 0.70 0.80 1.10
OUTPUTS (OUTA, OUTB)
ISNK/SRC Sink/source peak current(1) CLOAD = 0.22 µF, FSW = 1 kHz ±5 A
VDD-VOH High output voltage IOUT = -10 mA 0.075 V
VOL Low output voltage IOUT = 10 mA 0.01
ROH Output pull-up resistance(3) IOUT = -10 mA 2.5 5 7.5 Ω
ROL Output pull-down resistance IOUT = 10 mA 0.15 0.5 1 Ω
(1) Ensured by design.
(2) See timing diagrams in Figure 1, Figure 2, Figure 3, and Figure 4
(3) ROH represents on-resistance of only the P-Channel MOSFET device in pull-up structure of UCC2752X output stage.

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tR Rise time (2) CLOAD = 1.8 nF, VDD = 10 V 7 ns
tF Fall time(2) CLOAD = 1.8 nF, VDD = 10 V 6
tM Delay matching between 2 channels INA = INB, OUTA and OUTB at 50% transition point, VDD = 10 V 1 4
tPW Minimum input pulse width that changes the output state(2) VDD = 10 V 15
tD1, tD2 Input to output propagation delay (2) CLOAD = 1.8 nF, 7-V input pulse, VDD = 10 V 6 17 26
tD3, tD4 EN to output propagation delay (2) CLOAD = 1.8 nF, 7-V enable pulse, VDD = 10 V 6 13 23
UCC27527 UCC27528 timing1_lusaq3.gifFigure 1. Enable Function
(For Non-Inverting Input Driver Operation)
UCC27527 UCC27528 timing3_lusaq3.gifFigure 3. Non-Inverting Input Driver Operation
UCC27527 UCC27528 timing2_lusaq3.gifFigure 2. Enable Function
(For Inverting Input Driver Operation)
UCC27527 UCC27528 timing4_lusaq3.gifFigure 4. Inverting Input Driver Operation

7.7 Typical Characteristics

UCC27527 UCC27528 wav10_lusbd0.png
VDD = 3.4 V
Figure 5. Start-Up Current vs Temperature
UCC27527 UCC27528 wav12_lusbd0.png
VDD = 12 V
Figure 7. Supply Current vs Temperature (Outputs In DC On/Off Condition)
UCC27527 UCC27528 wav14_lusbd0.png
VDD = 12 V
Figure 9. Input Threshold vs Temperature
UCC27527 UCC27528 wav16_lusbd0.png
VDD = 12 V IOUT = 10 mA
Figure 11. Output Pullup Resistance vs Temperature
UCC27527 UCC27528 wav18_lusbd0.png
VDD = 10 V CLOAD = 1.8 nF
Figure 13. Rise Time vs Temperature
UCC27527 UCC27528 wav20_lusbd0.png
VDD = 10 V
Figure 15. Input To Output Propagation Delay vs Temperature
UCC27527 UCC27528 wav22_lusbd0.png
Both Channels Switching CLOAD = 1.8 nF
Figure 17. Operating Supply Current vs Frequency
UCC27527 UCC27528 wav24_lusbd0.png
CLOAD = 1.8 nF
Figure 19. Rise Time vs Supply Voltage
UCC27527 UCC27528 G017_lusaq3_EnableThreshold_4.5V.png
VDD = 4.5 V
Figure 21. Enable Threshold vs Temperature
UCC27527 UCC27528 wav11_lusbd0.png
VDD = 12 V CLOAD = 500 pF
fSW = 500 kHz Both Channel Switching
Figure 6. Operating Supply Current vs Temperature (Outputs Switching)
UCC27527 UCC27528 wav13_lusbd0.png
Figure 8. UVLO Threshold vs Temperature
UCC27527 UCC27528 wav15_lusbd0.png
VDD = 12 V
Figure 10. Enable Threshold vs Temperature
UCC27527 UCC27528 wav17_lusbd0.png
VDD = 12 V IOUT = 10 mA
Figure 12. Output Pulldown Resistance vs Temperature
UCC27527 UCC27528 wav19_lusbd0.png
VDD = 10 V CLOAD = 1.8 nF
Figure 14. Fall Time vs Temperature
UCC27527 UCC27528 wav21_lusbd0.png
VDD = 10 V
Figure 16. En To Output Propagation Delay vs Temperature
UCC27527 UCC27528 wav23_lusbd0.png
CLOAD = 1.8 nF
Figure 18. Propagation Delays vs Supply Voltage
UCC27527 UCC27528 wav25_lusbd0.png
CLOAD = 1.8 nF
Figure 20. Fall Time vs Supply Voltage
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