ZHCSAR7A February 2013 – September 2024 UCC27532
PRODUCTION DATA
High-current gate driver devices are required in switching power applications for a variety of reasons. In order to enable fast switching of power devices and reduce associated switching power losses, a powerful gate driver can be employed between the PWM output of controllers or signal isolation devices and the gates of the power semiconductor devices. Further, gate drivers are indispensable when sometimes it is just not feasible to have the PWM controller directly drive the gates of the switching devices. The situation will be often encountered since the PWM signal from a digital controller or signal isolation device is often a 3.3-V or 5-V logic signal which is not capable of effectively turning on a power switch. A level shifting circuitry is needed to boost the logic-level signal to the gate-drive voltage in order to fully turn on the power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar, (or p- n-channel MOSFET), transistors in totem-pole arrangement, being emitter follower configurations, prove inadequate for this since they lack level-shifting capability and low-drive voltage protection. Gate drivers effectively combine both the level-shifting, buffer drive and UVLO functions. Gate drivers also find other needs such as minimizing the effect of switching noise by locating the high-current driver physically close to the power switch, driving gate-drive transformers and controlling floating power device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses into itself.
The UCC27532 is very flexible in this role with a strong current drive capability and wide supply voltage range up to 35 V. This allows the driver to be used in 12-V Si MOSFET applications, 20-V and -5-V (relative to Source) SiC FET applications, 15-V and -15-V(relative to Emitter) IGBT applications and many others. As a single-channel driver, the UCC27532 can be used as a low-side or high-side driver. To use as a low-side driver, the switch ground is usually the system ground so it can be connected directly to the gate driver. To use as a high-side driver with a floating return node however, signal isolation is needed from the controller as well as an isolated bias to the UCC27532. Alternatively, in a high-side drive configuration the UCC27532 can be tied directly to the controller signal and biased with a non-isolated supply. However, in this configuration the outputs of the UCC27532 need to drive a pulse transformer which then drives the power-switch to work properly with the floating source and emitter of the power switch. Further, having the ability to control turn-on and turn-off speeds independently with both the OUTH and OUTL pins ensures optimum efficiency while maintaining system reliability. These requirements coupled with the need for low propagation delays and availability in compact, low-inductance packages with good thermal capability makes gate driver devices such as the UCC27532 extremely important components in switching power combining benefits of high-performance, low cost, component count and board space reduction and simplified system design.
FEATURE | BENEFIT |
---|---|
High source and sink current capability, 2.5 A and 5 A (asymmetrical). | High current capability offers flexibility in employing UCC27532 device to drive a variety of power switching devices at varying speeds. |
Low 17 ns (typ) propagation delay. | Extremely low pulse transmission distortion. |
Wide VDD operating range of 10 V to 32 V. | Flexibility in system design. |
Can be used in split-rail systems such as driving IGBTs with both positive and negative(relative to Emitter) supplies. | |
Optimal for many SiC FETs. | |
VDD UVLO protection. | Outputs are held Low in UVLO condition, which ensures predictable, glitch-free operation at power-up and power-down. |
High UVLO of 8.9V typical ensures that power switch is not on in high-impedance state which could result in high power dissipation or even failures. | |
Outputs held low when input pin (IN) in floating condition. | Safety feature, especially useful in passing abnormal condition tests during safety certification |
Split output structure (OUTH, OUTL). | Allows independent optimization of turn-on and turn-off speeds using series gate resistors. |
Strong sink current (5 A) and low pull-down impedance (0.65 Ω). | High immunity to high dV/dt Miller turn-on events. |
CMOS compatible input threshold logic with wide 2.1-V hysteresis. | Excellent noise immunity. |
Input capable of withstanding -6.5 V. | Enhanced signal reliability in noisy environments that experience ground bounce on the gate driver. |