ZHCSAO6G December   2012  – June 2019 UCC27531 , UCC27533 , UCC27536 , UCC27537 , UCC27538

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      无需负偏压即可驱动 IGBT
  4. 4 修订历史记录
    1.     说明 （续）
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 VDD Undervoltage Lockout
      2. 8.3.2 Input Stage
      3. 8.3.3 Enable Function
      4. 8.3.4 Output Stage
    4. 8.4 Device Functional Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Driving IGBT Without Negative Bias
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Input-to-Output Configuration
          2. 9.2.1.2.2 Input Threshold Type
          3. 9.2.1.2.3 VDD Bias Supply Voltage
          4. 9.2.1.2.4 Peak Source and Sink Currents
          5. 9.2.1.2.5 Enable and Disable Function
          6. 9.2.1.2.6 Propagation Delay
          7. 9.2.1.2.7 Power Dissipation
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Driving IGBT With 13-V Negative Turn-Off BIAS
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 Single-Output Driver
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curve
      4. 9.2.4 Using UCC2753x Drivers in an Inverter
        1. 9.2.4.1 Design Requirements
        2. 9.2.4.2 Detailed Design Procedure
        3. 9.2.4.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Consideration
  12. 12器件和文档支持
    1. 12.1 相关链接
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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