SGLS121D December   2002  – June 2020 UCC2800-Q1 , UCC2801-Q1 , UCC2802-Q1 , UCC2803-Q1 , UCC2804-Q1 , UCC2805-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Application Diagram
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Detailed Pin Description
        1. 9.3.1.1 COMP
        2. 9.3.1.2 FB
        3. 9.3.1.3 CS
        4. 9.3.1.4 RC
        5. 9.3.1.5 GND
        6. 9.3.1.6 OUT
        7. 9.3.1.7 VCC
        8. 9.3.1.8 Pin 8 (REF)
      2. 9.3.2  Undervoltage Lockout (UVLO)
      3. 9.3.3  Self-Biasing, Active Low Output
      4. 9.3.4  Reference Voltage
      5. 9.3.5  Oscillator
      6. 9.3.6  Synchronization
      7. 9.3.7  PWM Generator
      8. 9.3.8  Minimum Off-Time Setting (Dead-Time Control)
      9. 9.3.9  Leading Edge Blanking
      10. 9.3.10 Minimum Pulse Width
      11. 9.3.11 Current Limiting
      12. 9.3.12 Overcurrent Protection and Full Cycle Restart
      13. 9.3.13 Soft Start
      14. 9.3.14 Slope Compensation
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Operation
      2. 9.4.2 UVLO Mode
      3. 9.4.3 Soft Start Mode
      4. 9.4.4 Fault Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Current Sensing Network
        2. 10.2.2.2 Gate Drive Resistor
        3. 10.2.2.3 Vref Capacitor
        4. 10.2.2.4 RTCT
        5. 10.2.2.5 Start-Up Circuit
        6. 10.2.2.6 Voltage Feedback Compensation
          1. 10.2.2.6.1 Power Stage Gain, Zeroes, and Poles
          2. 10.2.2.6.2 Compensation Loop
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Community Resources
    2. 13.2 Trademarks
    3. 13.3 Related Links
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.2.2.2 Gate Drive Resistor

RG is the gate driver resistor for the power switch, QA. The selection of this resistor value must be done in conjunction with EMI compliance testing and efficiency testing. Larger RG slows down the turnon and turnoff of the MOSFET. Slower switching speed reduces EMI but also increases the switching loss. A tradeoff between switching loss and EMI performance must be carefully performed. For this design, 10 Ω was chosen as the gate driver resistor.

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