7.1 Absolute Maximum Ratings
All voltages are with respect to GND, −40°C < TJ = TA < 125°C, currents are positive into and negative out of the specified terminal, unless otherwise noted.
|
MIN |
MAX |
UNIT |
|
Continuous input voltage |
VCC(1) |
−0.5 |
21 |
V |
COMP(2), PHB, HVSEN(3), VINAC(3), VSENSE(3), TSET, BRST |
–0.5 |
7 |
ZCDA, ZCDB |
–0.5 |
4 |
CS(4) |
–0.5 |
3 |
GDA, GDB(5) |
–0.5 |
VCC + 0.3 |
|
Continuous input current |
VCC |
|
20 |
mA |
ZCDA, ZCDB |
|
±5 |
GDA, GDB(5) |
–25 |
25 |
VREF |
–2 |
|
|
Peak input current |
CS |
–30 |
|
mA |
TJ |
Operating junction temperature |
–40 |
125 |
°C |
TSOL |
Soldering 10 s |
|
260 |
°C |
Tstg |
Storage temperature |
–65 |
150 |
°C |
(1) Voltage on VCC is internally clamped. VCC may exceed the continuous absolute maximum input voltage rating if the source is current limited below the absolute maximum continuous VCC input current level.
(2) In normal use, COMP is connected to capacitors and resistors and is internally limited in voltage swing.
(3) In normal use, VINAC, VSENSE, and HVSEN are connected to high-value resistors and are internally limited in negative-voltage swing. Although not recommended for extended use, VINAC, VSENSE, and HVSEN can survive input currents as high as -10mA from negative voltage sources, and input currents as high as +0.5mA from positive voltage sources.
(4) In normal use, CS is connected to a series resistor to limit peak input current during brief system line-inrush conditions. In these situations, negative voltage on CS may exceed the continuous absolute maximum rating.
(5) No GDA or GDB current limiting is required when driving a power MOSFET gate. However, a small series resistor may be required to damp resonant ringing due to stray inductance.