SGLS245E May   2020  – May 2020 UCC2813-0-Q1 , UCC2813-1-Q1 , UCC2813-2-Q1 , UCC2813-3-Q1 , UCC2813-4-Q1 , UCC2813-5-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Descriptions
        1. 8.3.1.1 COMP
        2. 8.3.1.2 CS
        3. 8.3.1.3 FB
        4. 8.3.1.4 GND
        5. 8.3.1.5 OUT
        6. 8.3.1.6 RC
        7. 8.3.1.7 REF
        8. 8.3.1.8 VCC
      2. 8.3.2  Undervoltage Lockout (UVLO)
      3. 8.3.3  Self-Biasing, Active Low Output
      4. 8.3.4  Reference Voltage
      5. 8.3.5  Oscillator
      6. 8.3.6  Synchronization
      7. 8.3.7  PWM Generator
      8. 8.3.8  Minimum Off-Time Adjustment (Dead-Time Control)
      9. 8.3.9  Leading Edge Blanking
      10. 8.3.10 Minimum Pulse Width
      11. 8.3.11 Current Limiting
      12. 8.3.12 Overcurrent Protection and Full-Cycle Restart
      13. 8.3.13 Soft Start
      14. 8.3.14 Slope Compensation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
      3. 8.4.3 Soft-Start Mode
      4. 8.4.4 Fault Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Bulk Capacitor Calculation
        2. 9.2.2.2  Transformer Design
        3. 9.2.2.3  MOSFET and Output Diode Selection
        4. 9.2.2.4  Output Capacitor Calculation
        5. 9.2.2.5  Current Sensing Network
        6. 9.2.2.6  Gate Drive Resistor
        7. 9.2.2.7  REF Bypass Capacitor
        8. 9.2.2.8  RT and CT
        9. 9.2.2.9  Start-Up Circuit
        10. 9.2.2.10 Voltage Feedback Compensation Procedure
          1. 9.2.2.10.1 Power Stage Gain, Zeroes, and Poles
          2. 9.2.2.10.2 Compensating the Loop
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011(1) ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specifications.
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