ZHCSCP2 July   2014 UCC28880

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Startup Operation
      2. 7.4.2 Feedback and Voltage Control Loop
      3. 7.4.3 PWM Controller
      4. 7.4.4 Current Limit
      5. 7.4.5 Inductor Current Runaway Protection
      6. 7.4.6 Over-Temperature Protection
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 12-V, 100-mA Low-Side Buck Converter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Input Stage (RF, D2, D3, C1, C2, L2)
          2. 8.2.1.2.2 Regulator Capacitor (CVDD)
          3. 8.2.1.2.3 Freewheeling Diode (D1)
          4. 8.2.1.2.4 Inductor (L1)
          5. 8.2.1.2.5 Output Capacitor (CL)
          6. 8.2.1.2.6 Load Resistor (RL)
          7. 8.2.1.2.7 Feedback Path (Q1, RFB1, RFB2)
        3. 8.2.1.3 Application Curves
      2. 8.2.2 12-V, 100-mA, High-Side Buck Converter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Feedback path (CFB, RFB1 and RFB2) and Load Resistor (RL)
        3. 8.2.2.3 Application Curves
      3. 8.2.3 Additional UCC28880 Application Topologies
        1. 8.2.3.1 Low-Side Buck and LED Driver - Direct Feedback (level-shifted)
        2. 8.2.3.2 12-V, 100-mA High-Side Buck Converter
        3. 8.2.3.3 Non-Isolated, Low-Side Buck-Boost Converter
        4. 8.2.3.4 9.5 Non-Isolated, High-Side Buck-Boost Converter
        5. 8.2.3.5 9.6 Non-Isolated Flyback Converter
        6. 8.2.3.6 Isolated Flyback Converter
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
HVIN –0.3 700 (3) V
DRAIN Internally clamped 700(3) V
IDRAIN Positive drain current single pulse, pulse max duration 25 μs 320 mA
IDRAIN Negative drain current –320 mA
FB –0.3 6 V
VDD –0.3 6 V
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. These ratings apply over the operating ambient temperature ranges unless otherwise noted.
(3) TA = 25°C

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
Lead temperature 1.6 mm (1/16 inch) from case 10 seconds 260
V(ESD) Electrostatic discharge Human Body Model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –2000 2000 V
Human Body Model (HBM) per ANSI/ESDA/JEDEC JS-001, HVIN pin (1) –1500 1500
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –500 500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VVDD Voltage On VDD pin 5 V
VFB Voltage on FB pin –0.2 5 V
TA Operating ambient temperature –40 105 °C
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) UCC28880 UNIT
SOIC (D)
7 PINS
RθJA Junction-to-ambient thermal resistance 134.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.6
RθJB Junction-to-board thermal resistance 85
ψJT Junction-to-top characterization parameter 6.4
ψJB Junction-to-board characterization parameter 76
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VHVIN = 30 V, TA = TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VHVIN(min) Minimum Voltage to startup 30 V
INL Internal supply current, no load FB = 1.25 V (> VFB_TH) 58 100 µA
IFL Internal supply current, full load FB = 0.75 V (> VFB_TH) 72 120 µA
ICH0 Charging VDD Cap current VVDD = 0 V, –3.8 –1.6 –0.4 mA
ICH1 Charging VDD Cap current VVDD = 4.4V, VFB = 1.25 V –3.40 –1.30 –0.25 mA
VVDD Internally regulated low Voltage supply (supplied from HVIN pin) 4.5 5.0 5.5 V
VFB_TH FB pin reference threshold 0.94 1.02 1.10 V
VVDD(on) VDD turn-on threshold VDD low-to-high 3.55 3.92 4.28 V
ΔVVDD(uvlo) VDDON - VDD turn-off threshold VDD high-to-low 0.28 0.33 0.38 V
DMAX Maximum Duty Cycle FB = 0.75 V 45% 55%
ILIMIT Current Limit Static, TA = –40°C 300 mA
Static, TA = 25°C 170 210 260 mA
Static, TA = 125°C 140 mA
TJ(stop) Thermal Shutdown Temperature Internal junction temperature 150 °C
TJ(hyst) Thermal Shutdown Hysteresis Internal junction temperature 50 °C
BV Power Mosfet Breakdown Voltage TJ = 25°C 700 °C
RDS(on) Power MOSFET On-Resistance (includes internal sense-resistor) ID = 30 mA, TJ = 25°C 32 40 Ω
ID = 30 mA, TJ = 125°C 55 68 Ω
DRAIN_ILEAKAGE Power MOSFET off state leakage current VDRAIN = 700V, TJ = 25°C 5 µA
VDRAIN = 400 V, TJ = 125°C 20 µA
HVIN_IOFF HVIN off state current VHVIN = 700 V, TJ = 25°C, VVDD = 5.8 V 4.0 7.5 12.0 µA
VHVIN = 400 V, TJ = 125°C, VVDD = 5.8 V 20 µA

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fSW(max) Maximum switching frequency 52 62 75 kHz
tON_MAX Maximum switch on time (current limiter not triggered), FB = 0.75 V 5.7 7.6 9.5 µs
tOFF_MIN Minimum switch off time follows every tON time, FB = 0.75 V 5.7 7.6 9.5 µs
tMIN Minimum on time 0.17 0.22 0.30 µs
tOFF(ovl) Max off time (OL condition), tOFF(ovl) = tSW – tON(max) 130 200 270 µs

6.7 Typical Characteristics

D003_SLUSC05.gif
A.
Figure 1. ILIMIT vs Temperature
D010_SLUSC05.gif
Figure 3. INL and IFL vs Temperature
D013_SLUSC05.gif
Figure 5. VVDD(on) and ΔVUVLO vs Temperature
D012_SLUSC05.gif
Figure 7. Maximum Switching Frequency vs Temperature
D008_SLUSC05.gif
Figure 9. tON(max) and tOFF(min) vs Temperature
D002_SLUSC05.gif
A.
Figure 2. ILIMIT vs Drain Current Slope
D009_SLUSC05.gif
Figure 4. ICH0 and ICH1 vs Temperature
D006_SLUSC05.gif
Figure 6. IDS vs VDS at 25°C and 125°C
D005_SLUSC05.gif
Figure 8. VFB_TH vs Temperature
D014_SLUSC05.gif
Figure 10. (LMIN/VIN )MIN vs Temperature
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