ZHCSFK9C September   2016  – October 2024 UCC28950-Q1 , UCC28951-Q1

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Dissipation Ratings
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Start-Up Protection Logic
      2. 6.3.2  Voltage Reference (VREF)
      3. 6.3.3  Error Amplifier (EA+, EA–, COMP)
      4. 6.3.4  Soft-Start and Enable (SS/EN)
      5. 6.3.5  Light-Load Power Saving Features
      6. 6.3.6  Adaptive Delay, (Delay Between OUTA and OUTB, OUTC and OUTD (DELAB, DELCD, ADEL))
      7. 6.3.7  Adaptive Delay (Delay Between OUTA and OUTF, OUTB and OUTE (DELEF, ADELEF)
      8. 6.3.8  Minimum Pulse (TMIN)
      9. 6.3.9  Burst Mode
      10. 6.3.10 Switching Frequency Setting
      11. 6.3.11 Slope Compensation (RSUM)
      12. 6.3.12 Dynamic SR ON/OFF Control (DCM Mode)
      13. 6.3.13 Current Sensing (CS)
      14. 6.3.14 Cycle-by-Cycle Current Limit Current Protection and Hiccup Mode
      15. 6.3.15 Synchronization (SYNC)
      16. 6.3.16 Outputs (OUTA, OUTB, OUTC, OUTD, OUTE, OUTF)
      17. 6.3.17 Supply Voltage (VDD)
      18. 6.3.18 Ground (GND)
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Power Loss Budget
        2. 7.2.2.2  Preliminary Transformer Calculations (T1)
        3. 7.2.2.3  QA, QB, QC, QD FET Selection
        4. 7.2.2.4  Selecting LS
        5. 7.2.2.5  Selecting Diodes DB and DC
        6. 7.2.2.6  Output Inductor Selection (LOUT)
        7. 7.2.2.7  Output Capacitance (COUT)
        8. 7.2.2.8  Select FETs QE and QF
        9. 7.2.2.9  Input Capacitance (CIN)
        10. 7.2.2.10 Current Sense Network (CT, RCS, R7, DA)
          1. 7.2.2.10.1 Voltage Loop Compensation Recommendation
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Community Resources
    5. 8.5 Trademarks
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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订购信息

Outputs (OUTA, OUTB, OUTC, OUTD, OUTE, OUTF)

  • All MOSFET control outputs have 0.2A drive capability.
  • The control outputs are configured as P-MOS and N-MOS totem poles with typical RDS(on) 20Ω and 10Ω, accordingly.
  • The control outputs are capable of charging 100pF capacitor within 12ns and discharge within 8ns.
  • The amplitude of output control pulses is equal to VDD.
  • Control outputs are designed to be used with external gate MOSFET/IGBT drivers.
  • The design is optimized to prevent the latch-up of outputs and verified by extensive tests.

The UCC2895x-Q1 controlers has outputs OUTA, OUTB driving the active leg, initiating the duty cycle leg of power MOSFETs in a phase-shifted full bridge power stage, and outputs OUTC, OUTD driving the passive leg, completing the duty cycle leg, as it is shown in the typical timing diagram in Figure 7-1. Outputs OUTE and OUTF are optimized to drive the synchronous rectifier MOSFETs (see Figure 7-3). These outputs have 200mA peak-current capabilities and are designed to drive relatively small capacitive loads like inputs of external MOSFET or IGBT drivers. Recommended load capacitance should not exceed 100pF. The amplitude of the output signal is equal to the VDD voltage.