SLUS829G August   2008  – February 2020 UCC2897A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Diagram
  4. 4 Revision History
  5. 5 Device Options
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Detailed Pin Descriptions
        1. 8.3.1.1  RDEL
        2. 8.3.1.2  RON
        3. 8.3.1.3  ROFF
        4. 8.3.1.4  VREF
        5. 8.3.1.5  SYNC
        6. 8.3.1.6  GND
        7. 8.3.1.7  CS
        8. 8.3.1.8  RSLOPE
        9. 8.3.1.9  FB
        10. 8.3.1.10 SS/SD
        11. 8.3.1.11 PGND
        12. 8.3.1.12 AUX
        13. 8.3.1.13 OUT
        14. 8.3.1.14 VDD
        15. 8.3.1.15 LINEUV
        16. 8.3.1.16 VIN
        17. 8.3.1.17 LINEOV
      2. 8.3.2 JFET Control and UVLO
      3. 8.3.3 Line Undervoltage Protection
      4. 8.3.4 Line Overvoltage Protection
      5. 8.3.5 Pulse Skipping
      6. 8.3.6 Synchronization
      7. 8.3.7 Gate Drive Connection
      8. 8.3.8 Bootstrap Biasing
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Oscillator
        2. 9.2.2.2 Soft Start
        3. 9.2.2.3 VDD Bypass Requirements
        4. 9.2.2.4 Delay Programming
        5. 9.2.2.5 Input Voltage Monitoring
        6. 9.2.2.6 Current Sense and Slope Compensation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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9.2.2.3 VDD Bypass Requirements

First, the high-frequency filter capacitor is calculated based on the gate-charge parameters of the external MOSFETs. If the basic switching-frequency ripple is kept below 0.1-V across CHF, this value is approximated with Equation 15.

Equation 15. UCC2897A eq_13_vddby__slus829.gif

The energy storage requirements are defined primarily by the startup-time (tSS), turnon (approximately 12.7 V), and turnoff (approximately 8 V) thresholds of the undervoltage-lockout circuit-monitoring of the controller for the VDD pin. In addition, the bias-current consumption of the entire primary-side control circuit (IDD + IEXT) must be known. This power consumption is estimated with Equation 16.

Equation 16. PBIAS = [IDD + IEXT + (QG(main) + QG(aux) × fSW)] × VDD

During start-up (tSS), this power is provided by CBIAS while the voltage must remain above the UVLO turn-off threshold. This relationship is expressed with Equation 17.

Equation 17. PBIAS × tSS < ½ × CBIAS × (12.72 – 82)

Rearranging the equation yields the minimum value for CBIAS as shown in Equation 18.

Equation 18. UCC2897A eq_16_vddby__slus829.gif

Equation 19 may yield a big capacitance value that is not feasible in some applications, such as an additional energy-storage circuit. A smaller footprint is designed to ease the space demand. Refer to the Application Note for such a design.
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