米6体育平台手机版

SLUSFL3B June 2024 – October 2024 UCC57102 , UCC57108

PRODUCTION DATA

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

散热焊盘机械数据 (封装 | 引脚)

订购信息

5.5 Electrical Characteristics

VDD = 15 V, VEE = 0 V, 1-µF capacitor from VDD to GND, 1-µF capacitor from VEE to GND, TJ = –40°C to +150°C, CL = 0 pF, unless otherwise noted.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
I_VDDQ	VDD quiescent supply current	V_IN = 3.3V, EN = 5V, VDD = 6.5V			1.4	mA
I_VDD	VDD static supply current	V_IN = 3.3 V, EN = 5V		1.1	1.5	mA
I_VDD	VDD static supply current	V_IN = 0 V, EN = 5V		0.8	1.2	mA
I_VEEQ	VEE static supply current	V_IN = 0 V, EN = 5V, VEE = -10V			1.1	mA
I_VDDO	VDD dynamic operating current	f_SW = 1 MHz, EN = 5V, VDD=15 V, C_L=1.8nF			35	mA
I_DIS	VDD disable current	V_IN = 3.3 V, EN = 0 V		0.8	1.1	mA
VDD UNDERVOLTAGE THRESHOLDS AND DELAY
V_{VDD_ON}	VDD UVLO Rising Threshold	8-V UVLO Option	7.6	8	8.4	V
V_{VDD_OFF}	VDD UVLO Falling Threshold	8-V UVLO Option	6.65	7	7.35	V
V_{VDD_HYS}	VDD UVLO Threshold Hysteresis	8-V UVLO Option		1		V
t_UVLO2FLT	Propagation delay from UVLO shutdown to FLT			8.4		us
V_{VDD_ON}	VDD UVLO Rising Threshold	12.5-V UVLO Option	12.8	13.5	14.2	V
V_{VDD_OFF}	VDD UVLO Falling Threshold	12.5-V UVLO Option	11.8	12.5	13.2	V
V_{VDD_HYS}	VDD UVLO Threshold Hysteresis	12.5-V UVLO Option		1.0		V
VREF
V_REF	Voltage Reference	I_REF=10mA		5		V
I_REF	Reference output current				20	mA
IN, EN
V_INH	Input High Threshold Voltage		1.8	2.2	2.6	V
V_INL	Input Low Threshold Voltage		0.8	1.2	1.6	V
V_{IN_HYS}	Input-threshold Hysteresis			1.0		V
R_IND	IN Pin Pull Down Resistance	IN=EN= 3.3V		120		kΩ
V_ENH	Enable High Threshold Voltage		1.8	2.2	2.6	V
V_ENL	Enable Low Threshold Voltage		0.8	1.2	1.6	V
V_{EN_HYS}	Enable Threshold Hysteresis			1		V
R_ENU	EN Pin Pull Up Resistance	EN = 0V		400		kΩ
V_FLTth	FLT threshold voltage	I_FLT-sink = 15mA		0.43	1	V
DESAT DETECTION
I_CHG	Blanking capacitor charge current	V_DESAT = 3.25V	200	250	316	µA
I_DCHG	DESAT pin discharge current	V_DESAT = 8V		-20		mA
V_DESATTH	DESAT Detection Threshold		6.0	6.5	7.0	V
V_DESLO	DESAT voltage when OUT=L, referenced to GND				100	mV
t_DESLEB1 ⁽¹⁾	Leading edge blanking time			150		ns
t_DESFIL⁽¹⁾	DESAT deglitch filter			100	150	ns
t_DES2OUT⁽¹⁾	DESAT propagation delay to 90% of OUT	V_DESAT>V_DESATTH		140	250	ns
t_DES2FLT⁽¹⁾	DESAT propagation delay to FLT low	V_DESATTH to 90% of FLT		135	250	ns
SOFT TURN OFF
R_STO	Internal Soft turn-off Pulldown Resistance	DESAT triggered, V_OUT=5V		35		Ω
OVERTEMPERATURE PROTECTION
T_SD⁽¹⁾	Overtemperature threshold			180		C
T_HYS⁽¹⁾	Overtemperature protection hysteresis			30		C
t_OTP2FLT⁽¹⁾	Propagation delay from overtemperature shutdown to FLT	Over temperature shutdow to 90% of FLT		8		us
OUTPUT DRIVER STAGE
I_SRCPK⁽¹⁾	Peak Output Source Current	C_VDD = 10 µF, C_L = 0.1 µF, f = 1 kHz		-3		A
I_SNKPK⁽¹⁾	Peak Output Sink Current	C_VDD = 10 µF, C_L = 0.1 µF, f = 1 kHz		3		A
R_OH	Pull up resistance	I_OUT = –500mA		5		Ω
R_OL	Pull down resistance	I_OUT = 500mA		1		Ω

(1) Parameters are not tested in production.