ZHCSMR1C october 2019 – september 2021 UCC5870-Q1
PRODUCTION DATA
There are several internal rails that are used to power the device. All of the internal rails are monitored for OV and UV conditions. Any OV/UV faults are recorded in the STATUS2[INT_REG_PRI_FAULT] (STATUS2) and STATUS3[INT_REG_SEC_FAULT] (STATUS3) bits.
Bootstrap (VBST) and charge pump circuits generate the 4.5V power supply for the high side NMOS of internal driver stage. The implementation diagram is shown in Figure 7-1. The external cap on BST is charged to 4.5V while OUTL is on (MN2 is on). While OUTH is on (MN1 is on), the capacitor voltage is stacked above OUTH and supplies the gate drive for the high-side NMOS. Under most conditions, the bootstrap circuit is used and the timing operates as shown in Figure 7-2. However, for slow switching frequencies at high duty cycles the external capacitor may not be able to charge enough during the OUTH off time to supply the gate drive for the entire on-time. In these conditions, the charge pump circuit is used to hold the voltage across the bootstrap capacitor. .