ZHCS846B April   2012  – June  2015 ULN2003LV

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Dissipation Ratings
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 TTL and Other Logic Inputs
      2. 7.3.2 Input RC Snubber
      3. 7.3.3 High-Impedance Input Drivers
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
      1. 8.3.1 Max Supply Selector
      2. 8.3.2 Constant Current Generation
      3. 8.3.3 Unipolar Stepper Motor Driver
      4. 8.3.4 NOR Logic Driver
      5. 8.3.5 1.8-V Relay Driver
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 On-Chip Power Dissipation
    4. 10.4 Thermal Considerations
      1. 10.4.1 Improving Package Thermal Performance
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

Specified at TJ = –40°C to 125°C unless otherwise noted.(1)
MIN MAX UNIT
VIN Pins IN1- IN7 to GND voltage –0.3 5.5 V
VOUT Pins OUT1 – OUT7 to GND voltage 8 V
VCOM Pin COM to GND voltage 8 V
IGND Maximum GND-pin continuous current (TJ > +125°C) 700 mA
Maximum GND-pin continuous current (TJ < +100°C) 1.0 A
PD Total device power dissipation at TA = 85°C 16 Pin - SOIC 0.58 W
16 Pin -TSSOP 0.45 W
TA Operating free-air ambient temperature –40 85 °C
TJ Operating virtual junction temperature –55 150 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VOUT Channel off-state output pullup voltage 8 V
VCOM COM pin voltage 8 V
IOUT(ON) Per channel continuous sink current VINx = 3.3 V 100(1) mA
VINx = 5.0 V 140(1)
TJ Operating junction temperature –40 125 ºC
(1) Refer to Absolute Maximum Ratings for TJ dependent absolute maximum GND-pin current

6.4 Thermal Information

THERMAL METRIC(1) ULN2003LV UNIT
D (SOIC) PW (TSSOP)
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 112 142 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 69 74 °C/W
RθJB Junction-to-board thermal resistance 69 87 °C/W
ψJT Junction-to-top characterization parameter 33 22 °C/W
ψJB Junction-to-board characterization parameter 69 87 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Specified over the recommended junction temperature range TJ = –40°C to 125°C unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUTS IN1 THROUGH IN7 PARAMETERS
VI(ON) IN1–IN7 logic high input voltage Vpull-up = 3.3 V, Rpullup = 1 kΩ, IOUTX = 3.2 mA 1.65 V
VI(OFF) IN1–IN7 logic low input voltage Vpullup = 3.3 V, Rpullup = 1 kΩ,
(IOUTX = <5 µA)		 0.4 0.6 V
II(ON) IN1–IN7 ON state input current Vpullup = 3.3 V, VINx = 3.3 V 12 25 µA
II(OFF) IN1–IN7 OFF state input leakage Vpullup = 3.3 V, VINx = 0 V 250 nA
OUTPUTS OUT1 THROUGH OUT7 PARAMETERS
VOL(VCE-SAT) OUT1–OUT7 low-level output voltage VINX = 3.3 V, IOUTX = 50 mA 0.17 0.24 V
VINX = 3.3 V, IOUTX = 100 mA 0.36 0.49
VINX = 5.0 V, IOUTX = 100 mA 0.26 0.42
VINX = 5.0 V, IOUTX = 140 mA 0.40
IOUT(ON) OUT1–OUT7 ON-state continuous current(1) (2) at VOUTX = 0.4V VINX = 3.3 V, VOUTX = 0.4 V 80 100 mA
VINX = 5.0 V, VOUTX = 0.4 V 95 140
IOUT(OFF)(ICEX) OUT1–OUT7 OFF-state leakage current VINX = 0 V, VOUTX = VCOM = 8 V 0.17 µA
FREE-WHEELING DIODE PARAMETERS(3)(4)
VF Forward voltage drop IF-peak = 140 mA, VF = VOUTx – VCOM, 1.2 V
IF-peak Diode peak forward current 140 mA
(1) The typical continuous current rating is limited by VOL= 0.4V. Whereas, absolute maximum operating continuous current may be limited by the Thermal Performance.parameters listed in the Dissipation Rating Table and other Reliability parameters listed in the Recommended Operating ConditionsTable.
(2) Refer to the Absolute Maximum Ratings table for TJ dependent absolute maximum GND-pin current.
(3) Not rated for continuous current operation – for higher reliability use an external freewheeling diode for inductive loads resulting in more than specified maximum free-wheeling. diode peak current across various temperature conditions
(4) Specified by design only.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPHL OUT1–OUT7 logic high propagation delay VINX = 3.3V, Vpull-up = 3.3 V, Rpull-up = 50 Ω 25 ns
VINX = 5.0V, Vpull-up = 5 V, Rpull-up = 1 kΩ 15
tPLH OUT1–OUT7 logic low propagation delay VINX = 3.3V, Vpull-up = 3.3 V, Rpull-up = 50 Ω 45 ns
VINX = 5.0V, Vpull-up = 5 V, Rpull-up = 1kΩ 80
RPD IN1–IN7 input pull-down Resistance 210 300 390 kΩ
ζ IN1–IN7 Input filter time constant 9 ns
COUT OUT1–OUT7 output capacitance VINX = 3.3 V, VOUTX = 0.4 V 15 pF
(1) Rise and Fall propagation delays, tPHL and tPLH, are measured between 50% values of the input and the corresponding output signal amplitude transition.
(2) Specified by design only.

6.7 Dissipation Ratings

See (1)(3)
BOARD PACKAGE RθJC RθJA(2) DERATING FACTOR ABOVE TA = 25ºC TA < 25°C TA = 70°C TA = 85°C
High-K 16-Pin SOIC 69°C/W 112°C/W 8.88 mW/ºC 1.11 W 0.71 W 0.58 W
High-K 16-Pin TSSOP 74°C/W 142°C/W 7.11 mW/ºC 0.88 W 0.56 W 0.45 W
(1) Maximum dissipation values for retaining device junction temperature of 150°C
(2) Operating at the absolute TJ-max of 150°C can affect reliability– for higher reliability it is recommended to ensure TJ < 125°C
(3) Refer to TI’s design support web page at www.ti.com/thermal for improving device thermal performance

6.8 Typical Characteristics

TA = +25ºC
ULN2003LV tc1_lrs059.png Figure 1. Load Current 1-Channel; VOL=0.4V
ULN2003LV tc3_lrs059.png Figure 3. VOL versus IOUT VIN = 1.8V, 3.3V, 5.0V
ULN2003LV tc5_lrs059.png Figure 5. Freewheeling Diode VF vs IF
ULN2003LV tc2_lrs059.png Figure 2. Load Current 7-Channels in Parallel; VOL=0.4V
ULN2003LV tc4_lrs059.png Figure 4. VOL versus IOUT 2-Channels in Parallel; VOL=0.4V
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